The University of Southampton
University of Southampton Institutional Repository

ZnO tetrapod Schottky photodiodes

ZnO tetrapod Schottky photodiodes
ZnO tetrapod Schottky photodiodes
The fabrication of an ultraviolet photodiode employing a single ZnO tetrapod nanocrystal is reported. This diode structure is prepared by depositing W and Pt electrodes to form Ohmic and Schottky contacts, respectively. Dark current-voltage measurements show rectifying behavior. The properties of the metal-semiconductor interface are studied with above and below band gap illumination. It is found that with increasing UV excitation the device converts from a rectifying to an Ohmic behavior. This effect is attributed to a flattening of the energy bands due to the migration of photogenerated carriers within the space charge region at the metal-semiconductor interface.
0003-6951
072104
Newton, Marcus
fac92cce-a9f3-46cd-9f58-c810f7b49c7e
Firth, Steven
23130861-b2b2-45df-8052-aa27c1b0a463
matsuura, Takashi
ad55a727-480b-4423-93ba-cc2e329a0090
Warburton, P.A.
dcf3f5d6-3433-4441-9bb6-24d0ced7ebf7
Newton, Marcus
fac92cce-a9f3-46cd-9f58-c810f7b49c7e
Firth, Steven
23130861-b2b2-45df-8052-aa27c1b0a463
matsuura, Takashi
ad55a727-480b-4423-93ba-cc2e329a0090
Warburton, P.A.
dcf3f5d6-3433-4441-9bb6-24d0ced7ebf7

Newton, Marcus, Firth, Steven, matsuura, Takashi and Warburton, P.A. (2006) ZnO tetrapod Schottky photodiodes. Applied Physics Letters, 89 (7), 072104. (doi:10.1063/1.2335949).

Record type: Article

Abstract

The fabrication of an ultraviolet photodiode employing a single ZnO tetrapod nanocrystal is reported. This diode structure is prepared by depositing W and Pt electrodes to form Ohmic and Schottky contacts, respectively. Dark current-voltage measurements show rectifying behavior. The properties of the metal-semiconductor interface are studied with above and below band gap illumination. It is found that with increasing UV excitation the device converts from a rectifying to an Ohmic behavior. This effect is attributed to a flattening of the energy bands due to the migration of photogenerated carriers within the space charge region at the metal-semiconductor interface.

This record has no associated files available for download.

More information

Published date: 16 August 2006

Identifiers

Local EPrints ID: 451485
URI: http://eprints.soton.ac.uk/id/eprint/451485
ISSN: 0003-6951
PURE UUID: 9cdeadb6-e6de-4537-be78-262ea99d47bb
ORCID for Marcus Newton: ORCID iD orcid.org/0000-0002-4062-2117

Catalogue record

Date deposited: 30 Sep 2021 16:34
Last modified: 17 Mar 2024 03:33

Export record

Altmetrics

Contributors

Author: Marcus Newton ORCID iD
Author: Steven Firth
Author: Takashi matsuura
Author: P.A. Warburton

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×