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ZnO tetrapod Schottky photodiodes

ZnO tetrapod Schottky photodiodes
ZnO tetrapod Schottky photodiodes
The fabrication of an ultraviolet photodiode employing a single ZnO tetrapod nanocrystal is reported. This diode structure is prepared by depositing W and Pt electrodes to form Ohmic and Schottky contacts, respectively. Dark current-voltage measurements show rectifying behavior. The properties of the metal-semiconductor interface are studied with above and below band gap illumination. It is found that with increasing UV excitation the device converts from a rectifying to an Ohmic behavior. This effect is attributed to a flattening of the energy bands due to the migration of photogenerated carriers within the space charge region at the metal-semiconductor interface.
0003-6951
072104
Newton, Marcus
fac92cce-a9f3-46cd-9f58-c810f7b49c7e
Firth, Steven
23130861-b2b2-45df-8052-aa27c1b0a463
matsuura, Takashi
ad55a727-480b-4423-93ba-cc2e329a0090
Warburton, P.A.
dcf3f5d6-3433-4441-9bb6-24d0ced7ebf7
Newton, Marcus
fac92cce-a9f3-46cd-9f58-c810f7b49c7e
Firth, Steven
23130861-b2b2-45df-8052-aa27c1b0a463
matsuura, Takashi
ad55a727-480b-4423-93ba-cc2e329a0090
Warburton, P.A.
dcf3f5d6-3433-4441-9bb6-24d0ced7ebf7

Newton, Marcus, Firth, Steven, matsuura, Takashi and Warburton, P.A. (2006) ZnO tetrapod Schottky photodiodes. Applied Physics Letters, 89 (7), 072104. (doi:10.1063/1.2335949).

Record type: Article

Abstract

The fabrication of an ultraviolet photodiode employing a single ZnO tetrapod nanocrystal is reported. This diode structure is prepared by depositing W and Pt electrodes to form Ohmic and Schottky contacts, respectively. Dark current-voltage measurements show rectifying behavior. The properties of the metal-semiconductor interface are studied with above and below band gap illumination. It is found that with increasing UV excitation the device converts from a rectifying to an Ohmic behavior. This effect is attributed to a flattening of the energy bands due to the migration of photogenerated carriers within the space charge region at the metal-semiconductor interface.

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Published date: 16 August 2006

Identifiers

Local EPrints ID: 451485
URI: http://eprints.soton.ac.uk/id/eprint/451485
ISSN: 0003-6951
PURE UUID: 9cdeadb6-e6de-4537-be78-262ea99d47bb

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Date deposited: 30 Sep 2021 16:34
Last modified: 30 Sep 2021 16:34

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Contributors

Author: Marcus Newton
Author: Steven Firth
Author: Takashi matsuura
Author: P.A. Warburton

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