ZnO tetrapod p-n junction diodes
ZnO tetrapod p-n junction diodes
ZnO nanocrystals hold the potential for use in a wide range of applications particularly in optoelectronics. We report on the fabrication of a highly sensitive p-n junction diode structure based on a single ZnO tetrapod shaped nanocrystal. This device shows a noted response to ultraviolet light with high internal gain. The high responsivities we have observed exceed 104 A/W and are likely due to impact-ionization effects at the p-n junction interface.
153112
Newton, Marcus
fac92cce-a9f3-46cd-9f58-c810f7b49c7e
shaikhaidarov, Rais
92b6849f-b509-4504-8727-e6b9f94476bb
16 April 2009
Newton, Marcus
fac92cce-a9f3-46cd-9f58-c810f7b49c7e
shaikhaidarov, Rais
92b6849f-b509-4504-8727-e6b9f94476bb
Newton, Marcus and shaikhaidarov, Rais
(2009)
ZnO tetrapod p-n junction diodes.
Applied Physics Letters, 94 (15), .
(doi:10.1063/1.3119630).
Abstract
ZnO nanocrystals hold the potential for use in a wide range of applications particularly in optoelectronics. We report on the fabrication of a highly sensitive p-n junction diode structure based on a single ZnO tetrapod shaped nanocrystal. This device shows a noted response to ultraviolet light with high internal gain. The high responsivities we have observed exceed 104 A/W and are likely due to impact-ionization effects at the p-n junction interface.
This record has no associated files available for download.
More information
Accepted/In Press date: 23 March 2009
Published date: 16 April 2009
Identifiers
Local EPrints ID: 451658
URI: http://eprints.soton.ac.uk/id/eprint/451658
ISSN: 0003-6951
PURE UUID: bb5e88b7-0586-4d0f-88dd-c0ed74fdcc1b
Catalogue record
Date deposited: 18 Oct 2021 16:31
Last modified: 17 Mar 2024 03:33
Export record
Altmetrics
Contributors
Author:
Rais shaikhaidarov
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics
