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Effect of laser repetition rate on the growth of Sc2O3 via pulsed laser deposition

Effect of laser repetition rate on the growth of Sc2O3 via pulsed laser deposition
Effect of laser repetition rate on the growth of Sc2O3 via pulsed laser deposition
This paper reports a study of the effect of laser pulse repetition rate and substrate temperature on the properties of crystalline Sc2O3 films grown on <0001>-oriented sapphire via pulsed laser deposition (PLD). For the range of substrate laser-heating powers investigated, optimum <111>-film growth was obtained at the highest available repetition rate of 100 Hz. Scanning electron microscopy and X-ray diffraction measurements revealed that a decrease in the repetition rate favours highly textured/island growth. The repetition rate was also proven to affect the lattice constant of the films, with a difference up to 0.3% between the films grown at high and low repetition rates. The general trend indicates that the out-of-plane lattice constant of the film shifts closer to the bulk value when the pulse repetition rate is increased. However, the lattice constant could also be reduced through in-situ post-growth annealing, which had the additional benefit of reducing the width of the (222) rocking curve peak. This work provides further evidence that energetic-PLD dynamics leads to higher quality PLD-grown crystalline films and for this material undermines the old adage that lower pulse repetition rates lead to higher quality thin-film crystalline growth.
Crystal growth, Pulsed laser deposition, Repetition rate, ScO, Sesquioxide, Thin film
0947-8396
Govindassamy, Goby, Adithya
83390ff2-bee6-4845-8f60-41b4ad990125
Prentice, Jake J
75eecc9b-a154-4d58-8b8b-a772646ba922
Lunney, James G.
a6038103-9c96-49e6-8af1-893740c47627
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Mackenzie, Jacob
1d82c826-fdbf-425b-ac04-be43ccf12008
Govindassamy, Goby, Adithya
83390ff2-bee6-4845-8f60-41b4ad990125
Prentice, Jake J
75eecc9b-a154-4d58-8b8b-a772646ba922
Lunney, James G.
a6038103-9c96-49e6-8af1-893740c47627
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Mackenzie, Jacob
1d82c826-fdbf-425b-ac04-be43ccf12008

Govindassamy, Goby, Adithya, Prentice, Jake J, Lunney, James G., Eason, R.W. and Mackenzie, Jacob (2022) Effect of laser repetition rate on the growth of Sc2O3 via pulsed laser deposition. Applied Physics A: Materials Science & Processing, 128 (7), [577]. (doi:10.1007/s00339-022-05698-4).

Record type: Article

Abstract

This paper reports a study of the effect of laser pulse repetition rate and substrate temperature on the properties of crystalline Sc2O3 films grown on <0001>-oriented sapphire via pulsed laser deposition (PLD). For the range of substrate laser-heating powers investigated, optimum <111>-film growth was obtained at the highest available repetition rate of 100 Hz. Scanning electron microscopy and X-ray diffraction measurements revealed that a decrease in the repetition rate favours highly textured/island growth. The repetition rate was also proven to affect the lattice constant of the films, with a difference up to 0.3% between the films grown at high and low repetition rates. The general trend indicates that the out-of-plane lattice constant of the film shifts closer to the bulk value when the pulse repetition rate is increased. However, the lattice constant could also be reduced through in-situ post-growth annealing, which had the additional benefit of reducing the width of the (222) rocking curve peak. This work provides further evidence that energetic-PLD dynamics leads to higher quality PLD-grown crystalline films and for this material undermines the old adage that lower pulse repetition rates lead to higher quality thin-film crystalline growth.

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In preparation date: 31 October 2021
Submitted date: 24 November 2021
Accepted/In Press date: 16 May 2022
Published date: 15 June 2022
Additional Information: Funding Information: This project has received funding from the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 813159. The authors acknowledge the Engineering and Physical Sciences Research Council (EPSRC) for financial support of the Rigaku SmartLab via grants (EP/K009877/1), (EP/K00509X/1), and (EP/V035975/1), an EPSRC Doctoral Prize EP/T517859/1, and grant nos. EP/N018281/1 and EP/P027644/1. All data supporting this study are openly available from the University of Southampton repository at https://doi.org/10.5258/SOTON/D1985 . Funding Information: This study was funded by H 2020 (Grant No. 813159), JIM, Engineering and Physical Sciences Research Council (Grant Nos. EP/N018281/1, EP/P027644/1, EP/T517859/1, EP/K009877/1, EP/K00509X/1, EP/V035975/1). Publisher Copyright: © 2022, The Author(s).
Keywords: Crystal growth, Pulsed laser deposition, Repetition rate, ScO, Sesquioxide, Thin film

Identifiers

Local EPrints ID: 451893
URI: http://eprints.soton.ac.uk/id/eprint/451893
ISSN: 0947-8396
PURE UUID: acb691b3-88ca-42d6-b527-0052567e5425
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204
ORCID for Jacob Mackenzie: ORCID iD orcid.org/0000-0002-3355-6051

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Date deposited: 12 Jul 2022 16:35
Last modified: 06 Jun 2024 01:39

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Contributors

Author: Goby, Adithya Govindassamy
Author: Jake J Prentice
Author: James G. Lunney
Author: R.W. Eason ORCID iD
Author: Jacob Mackenzie ORCID iD

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