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Towards GaAs thin-film tracking detectors

Towards GaAs thin-film tracking detectors
Towards GaAs thin-film tracking detectors

Silicon-based tracking detectors have been used in several important applications, such as in cancer therapy using particle beams, and for the discovery of new elementary particles at the Large Hadron Collider at CERN. III-V semiconductor materials are an attractive alternative to silicon for this application, as they have some superior physical properties. They could meet the demands for fast timing detectors allowing time-of-flight measurements with ps resolution while being radiation tolerant and cost-efficient. As a material with a larger density, higher atomic number Z and much higher electron mobility than silicon, GaAs exhibits faster signal collection and a larger signal per μm of sensor thickness. In this work, we report on the fabrication of n-in-n GaAs thin-film devices intended to serve next-generation high-energy particle tracking detectors. Molecular beam epitaxy (MBE) was used to grow high-quality GaAs films with doping levels sufficiently low to achieve full depletion for detectors with an active thickness of 10 μm. The signal collection speed of the detector structures was assessed using the transient current technique (TCT). To elucidate the structural properties of the detector, Kelvin probe force microscopy (KPFM) was used, which confirmed the formation of the junction in the detector and revealed residual doping in the intrinsic layer. Our results suggest that GaAs thin films are suitable candidates to achieve thin and radiation-tolerant tracking detectors.

Diode, GaAs, High-energy Particle, Particle detector, molecular beam epitaxy (MBE)
1748-0221
1-12
Kuoppa, Victor
044a93a7-7e82-4010-8697-06dabccd3ae8
Ye, Sheng
3cdaba62-b2e3-47ec-9aab-a284b382922d
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
Holmkvist, William
12a7a317-db96-41d8-93c8-215a57e776e8
Young, Robert J.
333e90a3-3175-44a6-82ab-f543e6e293db
Muenstermann, Daniel
ce52a1aa-4b6a-48be-80f4-57c2cb813aeb
Kuoppa, Victor
044a93a7-7e82-4010-8697-06dabccd3ae8
Ye, Sheng
3cdaba62-b2e3-47ec-9aab-a284b382922d
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
Holmkvist, William
12a7a317-db96-41d8-93c8-215a57e776e8
Young, Robert J.
333e90a3-3175-44a6-82ab-f543e6e293db
Muenstermann, Daniel
ce52a1aa-4b6a-48be-80f4-57c2cb813aeb

Kuoppa, Victor, Ye, Sheng, Noori, Yasir, Holmkvist, William, Young, Robert J. and Muenstermann, Daniel (2021) Towards GaAs thin-film tracking detectors. Journal of Instrumentation, 16 (P09012), 1-12, [P09012]. (doi:10.1088/1748-0221/16/09/P09012).

Record type: Article

Abstract

Silicon-based tracking detectors have been used in several important applications, such as in cancer therapy using particle beams, and for the discovery of new elementary particles at the Large Hadron Collider at CERN. III-V semiconductor materials are an attractive alternative to silicon for this application, as they have some superior physical properties. They could meet the demands for fast timing detectors allowing time-of-flight measurements with ps resolution while being radiation tolerant and cost-efficient. As a material with a larger density, higher atomic number Z and much higher electron mobility than silicon, GaAs exhibits faster signal collection and a larger signal per μm of sensor thickness. In this work, we report on the fabrication of n-in-n GaAs thin-film devices intended to serve next-generation high-energy particle tracking detectors. Molecular beam epitaxy (MBE) was used to grow high-quality GaAs films with doping levels sufficiently low to achieve full depletion for detectors with an active thickness of 10 μm. The signal collection speed of the detector structures was assessed using the transient current technique (TCT). To elucidate the structural properties of the detector, Kelvin probe force microscopy (KPFM) was used, which confirmed the formation of the junction in the detector and revealed residual doping in the intrinsic layer. Our results suggest that GaAs thin films are suitable candidates to achieve thin and radiation-tolerant tracking detectors.

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Accepted/In Press date: 17 August 2021
Published date: 14 September 2021
Keywords: Diode, GaAs, High-energy Particle, Particle detector, molecular beam epitaxy (MBE)

Identifiers

Local EPrints ID: 451972
URI: http://eprints.soton.ac.uk/id/eprint/451972
ISSN: 1748-0221
PURE UUID: 312bb024-5713-4739-bebf-240daad0122e
ORCID for Yasir Noori: ORCID iD orcid.org/0000-0001-5285-8779

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Date deposited: 05 Nov 2021 17:30
Last modified: 28 Apr 2022 02:24

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Contributors

Author: Victor Kuoppa
Author: Sheng Ye
Author: Yasir Noori ORCID iD
Author: William Holmkvist
Author: Robert J. Young
Author: Daniel Muenstermann

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