Doping top-down e-beam fabricated germanium nanowires using molecular monolayers
Doping top-down e-beam fabricated germanium nanowires using molecular monolayers
This paper describes molecular layer doping of Ge nanowires. Molecules containing dopant atoms are chemically bound to a germanium surface. Subsequent annealing enables the dopant atoms from the surface bound molecules to diffuse into the underlying substrate. Electrical and material characterization was carried out, including an assessment of the Ge surface, carrier concentrations and crystal quality. Significantly, the intrinsic resistance of Ge nanowires with widths down to 30 nm, doped using MLD, was found to decrease by several orders of magnitude.
Conformal, Germanium, Molecular layer doping, Nanowires, Non-destructive, Semiconductors
196-200
Long, B.
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Alessio Verni, G.
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O'Connell, J.
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Shayesteh, M.
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Gangnaik, A.
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Georgiev, Y. M.
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Carolan, P.
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O'Connell, D.
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Kuhn, K. J.
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Clendenning, S. B.
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Nagle, R.
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Duffy, R.
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Holmes, J. D.
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1 May 2017
Long, B.
e757a6c4-f9a4-4c6c-af23-db1f9c0b42c0
Alessio Verni, G.
48f6e67f-c047-4dfa-aae5-36948b0494a9
O'Connell, J.
1cf5a85b-d386-4128-a912-f04e614f1ad8
Shayesteh, M.
660d4bbc-ec8a-4cde-81d7-4f0f5f61bb98
Gangnaik, A.
8b44e462-2a3f-4295-a9ff-1a2f7c09f14d
Georgiev, Y. M.
75581277-0154-4144-8a94-36eaffeeef02
Carolan, P.
04224040-abb2-4831-99d5-f8a300e216d7
O'Connell, D.
bf0ca238-85ba-4979-ae09-ea956cbd4e4d
Kuhn, K. J.
6953ca4c-c916-4a1e-a4f6-6815c37451bc
Clendenning, S. B.
d3543b03-1c27-4393-b9e3-c09ce8c6b167
Nagle, R.
fa2f8cd1-e71c-4eee-b1a9-114f483332f4
Duffy, R.
4f7f6149-f935-412e-a913-bf79df5361f3
Holmes, J. D.
d1b0d400-6052-4938-a422-40b60e404adb
Long, B., Alessio Verni, G., O'Connell, J., Shayesteh, M., Gangnaik, A., Georgiev, Y. M., Carolan, P., O'Connell, D., Kuhn, K. J., Clendenning, S. B., Nagle, R., Duffy, R. and Holmes, J. D.
(2017)
Doping top-down e-beam fabricated germanium nanowires using molecular monolayers.
Materials Science in Semiconductor Processing, 62, .
(doi:10.1016/j.mssp.2016.10.038).
Abstract
This paper describes molecular layer doping of Ge nanowires. Molecules containing dopant atoms are chemically bound to a germanium surface. Subsequent annealing enables the dopant atoms from the surface bound molecules to diffuse into the underlying substrate. Electrical and material characterization was carried out, including an assessment of the Ge surface, carrier concentrations and crystal quality. Significantly, the intrinsic resistance of Ge nanowires with widths down to 30 nm, doped using MLD, was found to decrease by several orders of magnitude.
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More information
Accepted/In Press date: 20 October 2016
e-pub ahead of print date: 27 October 2016
Published date: 1 May 2017
Keywords:
Conformal, Germanium, Molecular layer doping, Nanowires, Non-destructive, Semiconductors
Identifiers
Local EPrints ID: 452160
URI: http://eprints.soton.ac.uk/id/eprint/452160
ISSN: 1369-8001
PURE UUID: b5018be4-68c4-4647-b683-11b4ff5d3ee1
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Date deposited: 26 Nov 2021 17:30
Last modified: 16 Mar 2024 14:31
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Contributors
Author:
B. Long
Author:
G. Alessio Verni
Author:
J. O'Connell
Author:
M. Shayesteh
Author:
A. Gangnaik
Author:
Y. M. Georgiev
Author:
P. Carolan
Author:
D. O'Connell
Author:
K. J. Kuhn
Author:
S. B. Clendenning
Author:
R. Nagle
Author:
R. Duffy
Author:
J. D. Holmes
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