READ ME File For 'Dataset:Conduction channel configuration controlled digital and analog response in TiO2-based inorganic memristive artificial synapses'

Dataset DOI: 10.5258/SOTON/D2037

Date that the file was created: 11, 2021

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GENERAL INFORMATION
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ReadMe Author: FIRMAN SIMANJUNTAK, University of Southampton [OPTIONAL add ORCID ID]

Date of data collection: 2019-2021

Information about geographic location of data collection: TW, UK

Related projects:
the Ministry of Science and Technology, Taiwan (Grant No. MOST 109-2221-E-009-034-MY3), the NCTU Visiting Research Fellowship Program, the EPSRC Program (Grant No. EP/R024642/1), Project No. H2020-FETPROACT-2018-01 SYNCH, and European Commission Horizon 2020 Programme Marie Sklodowska-Curie actions-MSCA-IF-EF-ST MENESIS Project, Award/Contract Number No. 101029535 

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SHARING/ACCESS INFORMATION
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Licenses/restrictions placed on the data, or limitations of reuse: CCBY

Recommended citation for the data:

This dataset supports the publication:
AUTHORS:Firman Mangasa Simanjuntak, Chun-Ling Hsu, Thomas Abbey, Lung-Yu Chang, Sailesh Rajasekaran, Themis Prodromakis, and Tseung-Yuen Tseng.
TITLE: Conduction channel configuration controlled digital and analog response in TiO2-based inorganic memristive arti?cial synapses
JOURNAL: APL MATERIALS
PAPER DOI IF KNOWN: 10.1063/5.0067302


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DATA & FILE OVERVIEW
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This dataset contains:

[File list (filenames, directory structure (for zipped files) and brief description of all data files)]
Electrical.opju: contains IV sweep, synaptic, and fittings data of the devices.
-Directory/16nm/CC2mA= IV sweep of D16CC2 device, and its synaptic data
-Directory/16nm/CfCs10mA= IV sweep of D16CC10 device, and its synaptic data
-Directory/16nm/Fit= Curve fittings of D16 devices.
-Directory/25nm= IV sweep of D25CC2 device, and its synaptic data
-Directory/25nm/CC10mA= IV sweep of D25CC10 device, and its synaptic data
-Directory/25nm/Fit = Curve fittings of D25 devices.

Electrical.xlsx: contains IV sweep and synaptic data of the devices.
Contains several worksheets named according to the device code/parameter;
D16CC10: IV sweep of D16CC10 device
PD-D16CC10 AFTER SET-RESET: SYNAPTIC DATA OF D16CC2 (P 20us 1V;D 20us -1.2V)
D16CC2:IV sweep of D16CC2 device
PD-D16CC2: SYNAPTIC DATA OF D16CC2 (P 20us 1V;D 20us -1.2V)
D25CC2: IV sweep of D25CC2 device
PD-D25CC2-1:SYNAPTIC DATA OF D25CC2 (P 20us 1V;D 20us -1.2V)
PD-D25CC2-2:SYNAPTIC DATA OF D25CC2 (P 20us 0.9V;D 20us -0.95V)
PD-D25CC2-3:SYNAPTIC DATA OF D25CC2 (P 20us 0.88V;D 20us -0.92V)
PD-D25CC2-4:SYNAPTIC DATA OF D25CC2 (P 20us 0.86V;D 20us -0.9V)
D25CC10: IV sweep of D25CC10
PD-D25CC10: SYNAPTIC DATA OF D25CC10 (P 20us 1V;D 20us -1.2V)

Materials.opju: contains element depth profile, and XPS fitting of different layer region.
-Directory/xps= depth profile, and curve fittings

Materials/xlsx: contains element depth profile, and XPS fitting of different layer region.
Contains several worksheets named according to the sample code/parameter;
Depth:element depth profile
Fit:  XPS fitting 

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METHODOLOGICAL INFORMATION
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Methodological information is described in the paper. Please refer to the published paper.


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DATA-SPECIFIC INFORMATION 
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NA