Organo-arsenic molecular layers on silicon for high-density doping

O'Connell, John, Verni, Giuseppe Alessio, Gangnaik, Anushka, Shayesteh, Maryam, Long, Brenda, Georgiev, Yordan M., Petkov, Nikolay, McGlacken, Gerard P., Morris, Michael A., Duffy, Ray and Holmes, Justin D. (2015) Organo-arsenic molecular layers on silicon for high-density doping. ACS Applied Materials and Interfaces, 7 (28), 15514-15521. (doi:10.1021/acsami.5b03768).

Abstract

This article describes for the first time the controlled monolayer doping (MLD) of bulk and nanostructured crystalline silicon with As at concentrations approaching 2 × 10²⁰ atoms cm^-3. Characterization of doped structures after the MLD process confirmed that they remained defect- and damage-free, with no indication of increased roughness or a change in morphology. Electrical characterization of the doped substrates and nanowire test structures allowed determination of resistivity, sheet resistance, and active doping levels. Extremely high As-doped Si substrates and nanowire devices could be obtained and controlled using specific capping and annealing steps. Significantly, the As-doped nanowires exhibited resistances several orders of magnitude lower than the predoped materials.

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