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Integrated Plasmonic Infrared Photodetector Based on Colloidal HgTe Quantum Dots

Integrated Plasmonic Infrared Photodetector Based on Colloidal HgTe Quantum Dots
Integrated Plasmonic Infrared Photodetector Based on Colloidal HgTe Quantum Dots
This paper presents a 2300 nm wavelength photodetector which comprises a spin-deposited colloidal HgTe quantum dot (QD) film on a metal-insulator-metal (MIM) plasmonic waveguide. This photodetector is an integrated device based on the complementary metal-oxide-semiconductor compatible silicon-on-insulator platform. The device employs input and output silicon waveguide grating couplers, and HgTe QDs are used as the infrared photosensing material. Infrared light is coupled to the strongly confined MIM waveguide mode, which shrinks the device footprint and improves the light detection efficiency simultaneously. A room temperature responsivity of 23 mA W−1 and a noise-equivalent power of 8.7 × 10−11 W Hz−1/2 at 2300 nm wavelength are achieved by the photodetector at 2.14 W mm−2 (measured at the input to the plasmonic waveguide) with a device footprint of 15 µm × 0.35 µm. The light intensity–dependent photocurrent, the current noise spectral density, and the 3 dB operation bandwidth are all characterized. The charge transfer properties of the organic HgTe QD films are further analyzed based on field effect transistor measurements.
2365-709X
1900354
Zhu, Bingqing
2ac8bd5e-cbf1-4d9a-adcb-65dedf244b9b
Chen, Mengyu
aba99ba1-d648-46ab-9074-dcdd1cc21e5a
Zhu, Qiang
d1e9b689-8ce1-4adb-816a-7af76695d7e5
Zhou, Guodong
a65bca30-566f-43a6-9753-fd6e55f59a98
Abdelazim, Nema
2ac8bd5e-cbf1-4d9a-adcb-65dedf244b9b
Zhou, Wen
36deb225-090d-4138-a7c3-646cb123c2de
Kershaw, Stephen V.
92350526-451a-4269-999a-afc0f11139e9
Rogach, Andrey L.
d0a997c0-90ab-4d49-a788-6c09e3e0cb46
Zhao, Ni
78ce4eb4-ebd6-448c-aff5-69bef68dd5c1
Tsang, Hon Ki
7fd2ac9c-ef24-4fb4-9842-d536637170db
Zhu, Bingqing
2ac8bd5e-cbf1-4d9a-adcb-65dedf244b9b
Chen, Mengyu
aba99ba1-d648-46ab-9074-dcdd1cc21e5a
Zhu, Qiang
d1e9b689-8ce1-4adb-816a-7af76695d7e5
Zhou, Guodong
a65bca30-566f-43a6-9753-fd6e55f59a98
Abdelazim, Nema
2ac8bd5e-cbf1-4d9a-adcb-65dedf244b9b
Zhou, Wen
36deb225-090d-4138-a7c3-646cb123c2de
Kershaw, Stephen V.
92350526-451a-4269-999a-afc0f11139e9
Rogach, Andrey L.
d0a997c0-90ab-4d49-a788-6c09e3e0cb46
Zhao, Ni
78ce4eb4-ebd6-448c-aff5-69bef68dd5c1
Tsang, Hon Ki
7fd2ac9c-ef24-4fb4-9842-d536637170db

Zhu, Bingqing, Chen, Mengyu, Zhu, Qiang, Zhou, Guodong, Abdelazim, Nema, Zhou, Wen, Kershaw, Stephen V., Rogach, Andrey L., Zhao, Ni and Tsang, Hon Ki (2019) Integrated Plasmonic Infrared Photodetector Based on Colloidal HgTe Quantum Dots. Advanced Materials Technologies, 4, 1900354. (doi:10.1002/admt.201900354).

Record type: Article

Abstract

This paper presents a 2300 nm wavelength photodetector which comprises a spin-deposited colloidal HgTe quantum dot (QD) film on a metal-insulator-metal (MIM) plasmonic waveguide. This photodetector is an integrated device based on the complementary metal-oxide-semiconductor compatible silicon-on-insulator platform. The device employs input and output silicon waveguide grating couplers, and HgTe QDs are used as the infrared photosensing material. Infrared light is coupled to the strongly confined MIM waveguide mode, which shrinks the device footprint and improves the light detection efficiency simultaneously. A room temperature responsivity of 23 mA W−1 and a noise-equivalent power of 8.7 × 10−11 W Hz−1/2 at 2300 nm wavelength are achieved by the photodetector at 2.14 W mm−2 (measured at the input to the plasmonic waveguide) with a device footprint of 15 µm × 0.35 µm. The light intensity–dependent photocurrent, the current noise spectral density, and the 3 dB operation bandwidth are all characterized. The charge transfer properties of the organic HgTe QD films are further analyzed based on field effect transistor measurements.

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More information

Accepted/In Press date: 2 August 2019
e-pub ahead of print date: 23 August 2019

Identifiers

Local EPrints ID: 453381
URI: http://eprints.soton.ac.uk/id/eprint/453381
ISSN: 2365-709X
PURE UUID: 895acdd9-de5a-46a6-b594-f25242c336da

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Date deposited: 13 Jan 2022 18:17
Last modified: 13 Jan 2022 18:17

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Contributors

Author: Bingqing Zhu
Author: Mengyu Chen
Author: Qiang Zhu
Author: Guodong Zhou
Author: Nema Abdelazim
Author: Wen Zhou
Author: Stephen V. Kershaw
Author: Andrey L. Rogach
Author: Ni Zhao
Author: Hon Ki Tsang

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