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Ultrahigh negative infrared photoconductance in highly as-doped germanium nanowires induced by hot electron trapping

Ultrahigh negative infrared photoconductance in highly as-doped germanium nanowires induced by hot electron trapping
Ultrahigh negative infrared photoconductance in highly as-doped germanium nanowires induced by hot electron trapping
Here, we report the observation of negative photoconductance (NPC) effect in highly arsenic-doped germanium nanowires (Ge NWs) for the infrared light. NPC was studied by light-assisted Kelvin probe force microscopy, which shows the depletion of carriers in n-Ge NWs in the presence of infrared light. The trapping of photocarriers leads to high recombination of carriers in the presence of light, which is dominant in the n-type devices. Furthermore, a carrier trapping model was used to investigate the trapping and detrapping phenomena and it was observed that the NPC in n-Ge occurred, because of the fast trapping of mobile charge carriers by interfacial states. The performance of n-type devices was compared with p-type NW detectors, which shows the conventional positive photoconductive behavior with high gain of 104. The observed results can be used to study the application of Ge NWs for various optoelectronic applications involving light tunable memory device applications.
diameter-dependent photoconductance, germanium nanowire, hot electron trapping, infrared detection, negative photoconductivity
1934-1942
John, John Wellington
e234158e-c03e-4d8f-9ee8-4dff8dbbab00
Dhyani, Veerendra
48fe3c43-f21c-4cb8-b997-5a1f1ac5ba14
Georgiev, Yordan M.
75581277-0154-4144-8a94-36eaffeeef02
Gangnaik, Anushka S.
8b44e462-2a3f-4295-a9ff-1a2f7c09f14d
Biswas, Subhajit
843e3bab-57ca-4141-b30c-6d5a37f66bf5
Holmes, Justin D.
6f16ad07-0c95-4eba-a71b-70dd149f5a9a
Das, Amit K.
ad589824-57ab-4081-9dc8-1e3d404d4d50
Ray, Samit K.
1ec34644-0968-4bad-b0e4-f3359ea4b96b
Das, Samaresh
ba38a63c-8a79-47c5-b066-9b152160e342
John, John Wellington
e234158e-c03e-4d8f-9ee8-4dff8dbbab00
Dhyani, Veerendra
48fe3c43-f21c-4cb8-b997-5a1f1ac5ba14
Georgiev, Yordan M.
75581277-0154-4144-8a94-36eaffeeef02
Gangnaik, Anushka S.
8b44e462-2a3f-4295-a9ff-1a2f7c09f14d
Biswas, Subhajit
843e3bab-57ca-4141-b30c-6d5a37f66bf5
Holmes, Justin D.
6f16ad07-0c95-4eba-a71b-70dd149f5a9a
Das, Amit K.
ad589824-57ab-4081-9dc8-1e3d404d4d50
Ray, Samit K.
1ec34644-0968-4bad-b0e4-f3359ea4b96b
Das, Samaresh
ba38a63c-8a79-47c5-b066-9b152160e342

John, John Wellington, Dhyani, Veerendra, Georgiev, Yordan M., Gangnaik, Anushka S., Biswas, Subhajit, Holmes, Justin D., Das, Amit K., Ray, Samit K. and Das, Samaresh (2020) Ultrahigh negative infrared photoconductance in highly as-doped germanium nanowires induced by hot electron trapping. ACS Applied Electronic Materials, 2 (7), 1934-1942. (doi:10.1021/acsaelm.0c00245).

Record type: Article

Abstract

Here, we report the observation of negative photoconductance (NPC) effect in highly arsenic-doped germanium nanowires (Ge NWs) for the infrared light. NPC was studied by light-assisted Kelvin probe force microscopy, which shows the depletion of carriers in n-Ge NWs in the presence of infrared light. The trapping of photocarriers leads to high recombination of carriers in the presence of light, which is dominant in the n-type devices. Furthermore, a carrier trapping model was used to investigate the trapping and detrapping phenomena and it was observed that the NPC in n-Ge occurred, because of the fast trapping of mobile charge carriers by interfacial states. The performance of n-type devices was compared with p-type NW detectors, which shows the conventional positive photoconductive behavior with high gain of 104. The observed results can be used to study the application of Ge NWs for various optoelectronic applications involving light tunable memory device applications.

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e-pub ahead of print date: 28 June 2020
Published date: 28 July 2020
Keywords: diameter-dependent photoconductance, germanium nanowire, hot electron trapping, infrared detection, negative photoconductivity

Identifiers

Local EPrints ID: 453422
URI: http://eprints.soton.ac.uk/id/eprint/453422
PURE UUID: 88fde6f5-1593-4cfc-83cb-a6e6c9e0b84f

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Date deposited: 14 Jan 2022 17:36
Last modified: 14 Jan 2022 17:36

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Contributors

Author: John Wellington John
Author: Veerendra Dhyani
Author: Yordan M. Georgiev
Author: Anushka S. Gangnaik
Author: Subhajit Biswas
Author: Justin D. Holmes
Author: Amit K. Das
Author: Samit K. Ray
Author: Samaresh Das

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