Precise control of the interlayer twist angle in large scale MoS2 homostructures
Precise control of the interlayer twist angle in large scale MoS2 homostructures
Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction—twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS2 homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS2 homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics.
Liao, Mengzhou
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Wei, Zheng
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Du, Luojun
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Wang, Qinqin
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Tang, Jian
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Yu, Hua
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Wu, Fanfan
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Zhao, Jiaojiao
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Xu, Xiaozhi
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Han, Bo
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Liu, Kaihui
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Gao, Peng
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Polcar, Tomas
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Sun, Zhipei
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Shi, Dongxia
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Yang, Rong
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Zhang, Guangyu
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1 December 2020
Liao, Mengzhou
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Wei, Zheng
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Du, Luojun
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Wang, Qinqin
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Tang, Jian
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Yu, Hua
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Wu, Fanfan
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Zhao, Jiaojiao
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Xu, Xiaozhi
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Han, Bo
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Liu, Kaihui
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Gao, Peng
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Polcar, Tomas
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Sun, Zhipei
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Shi, Dongxia
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Yang, Rong
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Zhang, Guangyu
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Liao, Mengzhou, Wei, Zheng, Du, Luojun, Wang, Qinqin, Tang, Jian, Yu, Hua, Wu, Fanfan, Zhao, Jiaojiao, Xu, Xiaozhi, Han, Bo, Liu, Kaihui, Gao, Peng, Polcar, Tomas, Sun, Zhipei, Shi, Dongxia, Yang, Rong and Zhang, Guangyu
(2020)
Precise control of the interlayer twist angle in large scale MoS2 homostructures.
Nature Communications, 11 (1), [2153].
(doi:10.1038/s41467-020-16056-4).
Abstract
Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction—twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS2 homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS2 homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics.
Text
s41467-020-16056-4
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Published date: 1 December 2020
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Funding Information:
This project was supported by the National Science Foundation of China (NSFC, Grant Nos. 61734001, 11834017, 11574361, and 51572289), the Strategic Priority Research Program (B) of CAS (Grant No. XDB30000000), the Key Research Program of Frontier Sciences of CAS (Grant No. QYZDB-SSW-SLH004), the National Key R&D program of China (Grant No. 2016YFA0300904), and the Youth Innovation Promotion Association CAS (No. 2018013). T.P. acknowledges support from the project CZ.02.1.01/0.0/0.0/ 15_003/0000464. S.Z. acknowledges support from the project Academy of Finland (Grant Nos. 295777, 312297, and 314810), Academy of Finland Flagship Program (Grant No. 320167, PREIN), the European Union’s Horizon 2020 research and innovation program (Grant No. 820423, S2QUIP), and ERC (Grant No. 834742)
Publisher Copyright:
© 2020, The Author(s).
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Copyright 2020 Elsevier B.V., All rights reserved.
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Local EPrints ID: 453992
URI: http://eprints.soton.ac.uk/id/eprint/453992
ISSN: 2041-1723
PURE UUID: 78a0945f-a405-4699-8499-e823756f3128
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Date deposited: 27 Jan 2022 18:09
Last modified: 06 Jun 2024 01:49
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Contributors
Author:
Mengzhou Liao
Author:
Zheng Wei
Author:
Luojun Du
Author:
Qinqin Wang
Author:
Jian Tang
Author:
Hua Yu
Author:
Fanfan Wu
Author:
Jiaojiao Zhao
Author:
Xiaozhi Xu
Author:
Bo Han
Author:
Kaihui Liu
Author:
Peng Gao
Author:
Zhipei Sun
Author:
Dongxia Shi
Author:
Rong Yang
Author:
Guangyu Zhang
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