Theory, design, and characterization of nanoelectromechanical relays for stiction-based non-volatile memory
Theory, design, and characterization of nanoelectromechanical relays for stiction-based non-volatile memory
Diverse areas such as the Internet of Things (IoT), aerospace and industrial electronics increasingly require non-volatile memory to work under high-temperature, radiation-hard conditions, with zero standby power. Nanoelectromechanical (NEM) relays uniquely have the potential to work at 300°C and absorb high levels of radiation, with zero leakage current across the entire operational range. While NEM relays that utilise stiction for non-volatile operation have been demonstrated, it is not clear how to design a relay to reliably achieve given programming and reprogramming voltages, an essential requirement in producing a memory. Here, we develop an analytical, first-principle physics-based model of rotational NEM relays to provide detailed understanding of how the programming and reprogramming voltages vary based on the device dimensions and surface adhesion force. We then carry out an experimental parametric study of relays with a critical dimension of ≈80 nm to characterise the surface adhesion force, and derive guidelines for how a NEM relay should be dimensioned for a given contact surface force, feature size constraints and operating requirements. We carry out a scaling study to show that voltages of ≈1 V and a footprint under ≈2 μm² can be achieved with a critical dimension of ≈10 nm, with this device architecture.
Nanoelectromechanical (NEM) systems, high-Temperature, microelectromechanical devices, nanofabrication, nonvolatile memory
283-291
Pamunuwa, Dinesh
cf57fb7f-b05a-48d0-a9ef-2aca5f411cc3
Worsey, Elliot
154c4c60-37aa-4ecf-b7e5-b4feea5b51a0
Reynolds, Jamie Dean
96faa744-02ee-458c-8e48-953ea9e54afe
Seward, Derek
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Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Rana, Sunil
16726f81-3e09-45e4-b07b-944e7679e8ca
1 April 2022
Pamunuwa, Dinesh
cf57fb7f-b05a-48d0-a9ef-2aca5f411cc3
Worsey, Elliot
154c4c60-37aa-4ecf-b7e5-b4feea5b51a0
Reynolds, Jamie Dean
96faa744-02ee-458c-8e48-953ea9e54afe
Seward, Derek
f7e5aafc-a050-4101-9991-6b81386a8e10
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Rana, Sunil
16726f81-3e09-45e4-b07b-944e7679e8ca
Pamunuwa, Dinesh, Worsey, Elliot, Reynolds, Jamie Dean, Seward, Derek, Chong, Harold and Rana, Sunil
(2022)
Theory, design, and characterization of nanoelectromechanical relays for stiction-based non-volatile memory.
Journal of Microelectromechanical Systems, 31 (2), .
(doi:10.1109/JMEMS.2021.3138022).
Abstract
Diverse areas such as the Internet of Things (IoT), aerospace and industrial electronics increasingly require non-volatile memory to work under high-temperature, radiation-hard conditions, with zero standby power. Nanoelectromechanical (NEM) relays uniquely have the potential to work at 300°C and absorb high levels of radiation, with zero leakage current across the entire operational range. While NEM relays that utilise stiction for non-volatile operation have been demonstrated, it is not clear how to design a relay to reliably achieve given programming and reprogramming voltages, an essential requirement in producing a memory. Here, we develop an analytical, first-principle physics-based model of rotational NEM relays to provide detailed understanding of how the programming and reprogramming voltages vary based on the device dimensions and surface adhesion force. We then carry out an experimental parametric study of relays with a critical dimension of ≈80 nm to characterise the surface adhesion force, and derive guidelines for how a NEM relay should be dimensioned for a given contact surface force, feature size constraints and operating requirements. We carry out a scaling study to show that voltages of ≈1 V and a footprint under ≈2 μm² can be achieved with a critical dimension of ≈10 nm, with this device architecture.
Text
Theory_Design_and_Characterization_of_Nanoelectromechanical_Relays_for_Stiction-Based_Non-Volatile_Memory
- Accepted Manuscript
More information
Accepted/In Press date: 20 December 2021
Published date: 1 April 2022
Keywords:
Nanoelectromechanical (NEM) systems, high-Temperature, microelectromechanical devices, nanofabrication, nonvolatile memory
Identifiers
Local EPrints ID: 454141
URI: http://eprints.soton.ac.uk/id/eprint/454141
ISSN: 1057-7157
PURE UUID: 2cc517d5-67d6-42e8-9f4e-cdd4a8490e1f
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Date deposited: 01 Feb 2022 17:41
Last modified: 17 Mar 2024 03:12
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Contributors
Author:
Dinesh Pamunuwa
Author:
Elliot Worsey
Author:
Jamie Dean Reynolds
Author:
Derek Seward
Author:
Harold Chong
Author:
Sunil Rana
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