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FAPbBr3 perovskite quantum dots as a multifunctional luminescent-downshifting passivation layer for GaAs solar cells

FAPbBr3 perovskite quantum dots as a multifunctional luminescent-downshifting passivation layer for GaAs solar cells
FAPbBr3 perovskite quantum dots as a multifunctional luminescent-downshifting passivation layer for GaAs solar cells

Solar cells based on GaAs often include a wide-bandgap semiconductor as a window layer to improve surface passivation. Such devices often have poor photon-to-electron conversion efficiency at higher photon energies due to parasitic absorption. In this article, we deposit FAPbBr3 perovskite quantum dots on the AlInP window layer of a GaAs thin-film solar cell to improve the external quantum efficiency (EQE) across its entire absorption range, resulting in an 18% relative enhancement of the short-circuit current density. Luminescent downshifting from the quantum dots to the GaAs device contributes to a large effective enhancement of the internal quantum efficiency (IQE) at shorter wavelengths. Additionally, improved surface passivation of the window layer results in a 14–16% broadband increase of the IQE. These mechanisms combined with increased overall photon collection (antireflective effects) results in a doubling of the EQE in the ultraviolet region of the solar spectrum. Our results show a promising application of perovskite nanocrystals to improve the performance of well-established thin-film solar cell technologies.

Gallium arsenide, Luminescence down shifting, Perovskite, Quantum dots, Solar cells
0927-0248
Rwaimi, Malek
192302ce-5dac-46a6-9406-15a96722df5a
Bailey, Christopher
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Shaw, Peter
dcb6c9af-bf38-4dfe-8395-8aeac2ad5cc7
Mercier, Thomas M
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Krishnan, Chirenjeevi
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Rahman, Tasmiat
e7432efa-2683-484d-9ec6-2f9c568d30cd
Lagoudakis, Pavlos
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Horng, Ray-Hua
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Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Charlton, Matthew B
8bd4c82b-b2fe-467b-85b2-3c9fc2416dca
Rwaimi, Malek
192302ce-5dac-46a6-9406-15a96722df5a
Bailey, Christopher
5dc8d026-09d8-4dd5-aef2-c4edf83deb8f
Shaw, Peter
dcb6c9af-bf38-4dfe-8395-8aeac2ad5cc7
Mercier, Thomas M
0334c2ef-7f94-4d63-8501-5c7351149833
Krishnan, Chirenjeevi
8d69ae3a-1b92-4222-b328-82c7f91b92de
Rahman, Tasmiat
e7432efa-2683-484d-9ec6-2f9c568d30cd
Lagoudakis, Pavlos
ea50c228-f006-4edf-8459-60015d961bbf
Horng, Ray-Hua
6d1deefe-dc9d-498e-9314-f2c9c569fd8c
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Charlton, Matthew B
8bd4c82b-b2fe-467b-85b2-3c9fc2416dca

Rwaimi, Malek, Bailey, Christopher, Shaw, Peter, Mercier, Thomas M, Krishnan, Chirenjeevi, Rahman, Tasmiat, Lagoudakis, Pavlos, Horng, Ray-Hua, Boden, Stuart and Charlton, Matthew B (2022) FAPbBr3 perovskite quantum dots as a multifunctional luminescent-downshifting passivation layer for GaAs solar cells. Solar Energy Materials and Solar Cells, 234, [111406]. (doi:10.1016/j.solmat.2021.111406).

Record type: Article

Abstract

Solar cells based on GaAs often include a wide-bandgap semiconductor as a window layer to improve surface passivation. Such devices often have poor photon-to-electron conversion efficiency at higher photon energies due to parasitic absorption. In this article, we deposit FAPbBr3 perovskite quantum dots on the AlInP window layer of a GaAs thin-film solar cell to improve the external quantum efficiency (EQE) across its entire absorption range, resulting in an 18% relative enhancement of the short-circuit current density. Luminescent downshifting from the quantum dots to the GaAs device contributes to a large effective enhancement of the internal quantum efficiency (IQE) at shorter wavelengths. Additionally, improved surface passivation of the window layer results in a 14–16% broadband increase of the IQE. These mechanisms combined with increased overall photon collection (antireflective effects) results in a doubling of the EQE in the ultraviolet region of the solar spectrum. Our results show a promising application of perovskite nanocrystals to improve the performance of well-established thin-film solar cell technologies.

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Accepted/In Press date: 20 September 2021
e-pub ahead of print date: 6 October 2021
Published date: 1 January 2022
Additional Information: Funding Information: T. Rahman and S.A. Boden acknowledge support from the Supersolar Solar Energy Hub ( EPSRC grants EP/J017361/1 and EP/M014797/1 ). P. Shaw and M.D.B Charlton acknowledge funding by the EPSRC ( EP/M508147/1 ). C. Bailey and P. Lagoudakis acknowledge funding from the EPRSC (grant EP/L01551X/1 ). Publisher Copyright: © 2021 Elsevier B.V. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
Keywords: Gallium arsenide, Luminescence down shifting, Perovskite, Quantum dots, Solar cells

Identifiers

Local EPrints ID: 454531
URI: http://eprints.soton.ac.uk/id/eprint/454531
ISSN: 0927-0248
PURE UUID: d35f01da-d14b-4980-bc50-8bddea6bc4c2
ORCID for Christopher Bailey: ORCID iD orcid.org/0000-0001-6593-1381
ORCID for Peter Shaw: ORCID iD orcid.org/0000-0001-9044-1069
ORCID for Pavlos Lagoudakis: ORCID iD orcid.org/0000-0002-3557-5299
ORCID for Stuart Boden: ORCID iD orcid.org/0000-0002-4232-1828

Catalogue record

Date deposited: 15 Feb 2022 17:39
Last modified: 27 Apr 2022 01:47

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Contributors

Author: Malek Rwaimi
Author: Christopher Bailey ORCID iD
Author: Peter Shaw ORCID iD
Author: Thomas M Mercier
Author: Chirenjeevi Krishnan
Author: Tasmiat Rahman
Author: Pavlos Lagoudakis ORCID iD
Author: Ray-Hua Horng
Author: Stuart Boden ORCID iD
Author: Matthew B Charlton

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