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10.1063/5.0076903
2022-03-03
Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices
aip.org
© 2022 Author(s)
10.1063/5.0076903
https://doi.org/10.1063/5.0076903
VoR
doi:10.1063/5.0076903
APL Materials
application/pdf
AIP Publishing, LLC
Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices
Firman Mangasa Simanjuntak
Julianna Panidi
Fayzah Talbi
Adam Kerrigan
Vlado K. Lazarov
Themistoklis Prodromakis
APL Mater. 2022.10:031103
2022-03-03
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10.1063/5.0076903
aip.org
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