Photon-echo quantum memories in inhomogeneously broadened two-level atoms
Photon-echo quantum memories in inhomogeneously broadened two-level atoms
Here, we propose a solid-state quantum memory that does not require spectral holeburning, instead using strong rephasing pulses like traditional photon-echo techniques. The memory uses external broadening fields to reduce the optical depth and so switch off the collective atom-light interaction when desired. The proposed memory should allow operation with reasonable efficiency in a much broader range of material systems, for instance Er3+ doped crystals which have a transition at 1.5 μm. We present analytic theory supported by numerical calculations and initial experiments.
McAuslan, D. L.
953a34e2-d7c6-4c9f-b364-5a7f39570b77
Ledingham, P. M.
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Naylor, W. R.
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Beavan, S. E.
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Hedges, M. P.
53c7c436-f761-494b-9dc6-e40246d10460
Sellars, M. J.
53da2834-1c5f-45d1-bca8-9287a2e341f6
Longdell, J. J.
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5 August 2011
McAuslan, D. L.
953a34e2-d7c6-4c9f-b364-5a7f39570b77
Ledingham, P. M.
8db45fde-00d8-421a-93d6-7f18ac835c28
Naylor, W. R.
bf41ab28-7db2-4f58-8e14-1c73b63753f3
Beavan, S. E.
3532c8f2-c1fa-4e53-8fd2-770203240071
Hedges, M. P.
53c7c436-f761-494b-9dc6-e40246d10460
Sellars, M. J.
53da2834-1c5f-45d1-bca8-9287a2e341f6
Longdell, J. J.
82bf4942-c14f-4e60-b331-9bc7470f947a
McAuslan, D. L., Ledingham, P. M., Naylor, W. R., Beavan, S. E., Hedges, M. P., Sellars, M. J. and Longdell, J. J.
(2011)
Photon-echo quantum memories in inhomogeneously broadened two-level atoms.
Physical Review A - Atomic, Molecular, and Optical Physics, 84 (2), [022309].
(doi:10.1103/PhysRevA.84.022309).
Abstract
Here, we propose a solid-state quantum memory that does not require spectral holeburning, instead using strong rephasing pulses like traditional photon-echo techniques. The memory uses external broadening fields to reduce the optical depth and so switch off the collective atom-light interaction when desired. The proposed memory should allow operation with reasonable efficiency in a much broader range of material systems, for instance Er3+ doped crystals which have a transition at 1.5 μm. We present analytic theory supported by numerical calculations and initial experiments.
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Published date: 5 August 2011
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Local EPrints ID: 455323
URI: http://eprints.soton.ac.uk/id/eprint/455323
ISSN: 1050-2947
PURE UUID: 45595d22-c839-42d5-ae4b-ea524b436a01
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Date deposited: 17 Mar 2022 17:30
Last modified: 17 Mar 2024 04:03
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Contributors
Author:
D. L. McAuslan
Author:
W. R. Naylor
Author:
S. E. Beavan
Author:
M. P. Hedges
Author:
M. J. Sellars
Author:
J. J. Longdell
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