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Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD

Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD
Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD
We report the effects of the growth temperature on the structural and electrical properties of the InAlGaN/GaN heterostructures grown on c-plane sapphire substrates. X-ray Photoelectron Spectroscopy and Atomic Force Microscopy measurements results indicate that the InAlGaN layer properties is strongly dependent on the growth temperature. It is observed that the Gallium incorporation increases with the increase of the growth temperature. Meanwhile, the surface roughness decreases from 0.49 nm to 0.34 nm with the increase of growth temperature. The variation of structural properties, composition and surface morphology influences the transport properties of the InAlGaN/GaN heterostructures. High 2DEG electron density, low sheet resistance and good C-V response with a steep slope for InAlGaN/GaN HEMT were achieved at an optimized growth temperature window between 900 °C and 950 °C.
0022-0248
7-12
Lumbantoruan, Franky
fb38a5ff-7853-4f33-b44e-210751a2533d
Zheng, Xia-Xi
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Huang, Jian-Hao
cb51e1b4-3ec8-4e67-81f0-e07b64ac6a0d
Huang, Ren-Yao
6047afe7-96fc-4546-ae04-ff23e5c821df
Mangasa, Firman
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Chang, Edward-Yi
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Tu, Yung-Yi
4f2332e9-dd90-4538-848d-e86c13e05a5d
Lee, Ching-Ting
f4582055-4710-4788-88a2-286dfce10e46
Lumbantoruan, Franky
fb38a5ff-7853-4f33-b44e-210751a2533d
Zheng, Xia-Xi
4fe6a16f-d521-4480-92e7-ac84d9c01f0e
Huang, Jian-Hao
cb51e1b4-3ec8-4e67-81f0-e07b64ac6a0d
Huang, Ren-Yao
6047afe7-96fc-4546-ae04-ff23e5c821df
Mangasa, Firman
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chang, Edward-Yi
3f25ef8d-e10b-4f01-ba0d-9fd0dc22ec38
Tu, Yung-Yi
4f2332e9-dd90-4538-848d-e86c13e05a5d
Lee, Ching-Ting
f4582055-4710-4788-88a2-286dfce10e46

Lumbantoruan, Franky, Zheng, Xia-Xi, Huang, Jian-Hao, Huang, Ren-Yao, Mangasa, Firman, Chang, Edward-Yi, Tu, Yung-Yi and Lee, Ching-Ting (2018) Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD. Journal of Crystal Growth, 501, 7-12. (doi:10.1016/j.jcrysgro.2018.08.015).

Record type: Article

Abstract

We report the effects of the growth temperature on the structural and electrical properties of the InAlGaN/GaN heterostructures grown on c-plane sapphire substrates. X-ray Photoelectron Spectroscopy and Atomic Force Microscopy measurements results indicate that the InAlGaN layer properties is strongly dependent on the growth temperature. It is observed that the Gallium incorporation increases with the increase of the growth temperature. Meanwhile, the surface roughness decreases from 0.49 nm to 0.34 nm with the increase of growth temperature. The variation of structural properties, composition and surface morphology influences the transport properties of the InAlGaN/GaN heterostructures. High 2DEG electron density, low sheet resistance and good C-V response with a steep slope for InAlGaN/GaN HEMT were achieved at an optimized growth temperature window between 900 °C and 950 °C.

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Published date: November 2018

Identifiers

Local EPrints ID: 455436
URI: http://eprints.soton.ac.uk/id/eprint/455436
ISSN: 0022-0248
PURE UUID: e19af161-78f1-4af6-98c8-0e4122dc384f

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Date deposited: 21 Mar 2022 17:55
Last modified: 21 Mar 2022 17:55

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Contributors

Author: Franky Lumbantoruan
Author: Xia-Xi Zheng
Author: Jian-Hao Huang
Author: Ren-Yao Huang
Author: Firman Mangasa
Author: Edward-Yi Chang
Author: Yung-Yi Tu
Author: Ching-Ting Lee

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