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Surface phonon polaritons for infrared optoelectronics

Surface phonon polaritons for infrared optoelectronics
Surface phonon polaritons for infrared optoelectronics

In recent years, there has been significant fundamental research into surface phonon polaritons, owing to their ability to compress light to extremely small dimensions, low losses, and the ability to support anisotropic propagation. In this Perspective, after briefly reviewing the present state of mid-infrared optoelectronics, we will assess the potential of surface phonon polariton-based nanophotonics for infrared (3-100 μm) light sources, detectors, and modulators. These will operate in the Reststrahlen region where conventional semiconductor light sources become ineffective. Drawing on the results from the past few years, we will sketch some promising paths to create such devices and we will evaluate their practical advantages and disadvantages when compared to other approaches to infrared optoelectronics.

0021-8979
Gubbin, Christopher R.
09b75073-7a9a-4443-9a84-1458ec2535e9
De Liberato, Simone
5942e45f-3115-4027-8653-a82667ed8473
Folland, Thomas G.
c76f06dc-e9c4-4fb0-9344-ec54e320b7b1
Gubbin, Christopher R.
09b75073-7a9a-4443-9a84-1458ec2535e9
De Liberato, Simone
5942e45f-3115-4027-8653-a82667ed8473
Folland, Thomas G.
c76f06dc-e9c4-4fb0-9344-ec54e320b7b1

Gubbin, Christopher R., De Liberato, Simone and Folland, Thomas G. (2022) Surface phonon polaritons for infrared optoelectronics. Journal of Applied Physics, 131 (3), [030901]. (doi:10.1063/5.0064234).

Record type: Article

Abstract

In recent years, there has been significant fundamental research into surface phonon polaritons, owing to their ability to compress light to extremely small dimensions, low losses, and the ability to support anisotropic propagation. In this Perspective, after briefly reviewing the present state of mid-infrared optoelectronics, we will assess the potential of surface phonon polariton-based nanophotonics for infrared (3-100 μm) light sources, detectors, and modulators. These will operate in the Reststrahlen region where conventional semiconductor light sources become ineffective. Drawing on the results from the past few years, we will sketch some promising paths to create such devices and we will evaluate their practical advantages and disadvantages when compared to other approaches to infrared optoelectronics.

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Accepted/In Press date: 22 December 2021
e-pub ahead of print date: 18 January 2022
Published date: 21 January 2022
Additional Information: Funding Information: S.D.L. is supported by a Royal Society Research fellowship and the Philip Leverhulme prize. S.D.L. and C.R.G. acknowledge support from the Royal Society under Grant No. RGF\EA\181001 and the Leverhumlme under Grant No. RPG-2019-174. T.G.F is supported through startup funds at the University of Iowa and the Old Gold Fellowship. Publisher Copyright: © 2022 Author(s).

Identifiers

Local EPrints ID: 456160
URI: http://eprints.soton.ac.uk/id/eprint/456160
ISSN: 0021-8979
PURE UUID: 69a8ab8f-6bb3-4ae2-834d-eaa46484a05b
ORCID for Christopher R. Gubbin: ORCID iD orcid.org/0000-0003-3988-028X
ORCID for Simone De Liberato: ORCID iD orcid.org/0000-0002-4851-2633

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Date deposited: 26 Apr 2022 15:08
Last modified: 06 Jun 2024 04:05

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Contributors

Author: Christopher R. Gubbin ORCID iD
Author: Thomas G. Folland

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