Ultra-high-speed wavelength conversion in a silicon photonic chip
Ultra-high-speed wavelength conversion in a silicon photonic chip
We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ∼110 fJ/bit. The waveguide dispersion of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton-absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips with high data integrity and indicate that high-speed operation can be obtained at moderate power levels where nonlinear absorption due to TPA and free-carrier absorption (FCA) is not detrimental. This demonstration can potentially enable highspeed optical networks on a silicon photonic chip.
19886-19894
Hu, Hao
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Ji, Hua
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Galili, Michael
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Pu, Minhao
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Peucheret, Christophe
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Mulvad, Hans C.H.
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Yvind, Kresten
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Hvam, Jørn M.
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Jeppesen, Palle
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Oxenløwe, Leif K.
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10 October 2011
Hu, Hao
6be9c5bf-d915-4766-9770-ec3f73e22c31
Ji, Hua
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Galili, Michael
5628c538-e95f-417f-b008-a4c781fb6c39
Pu, Minhao
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Peucheret, Christophe
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Mulvad, Hans C.H.
b461b05f-88f2-4f28-b20a-e45cf258f456
Yvind, Kresten
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Hvam, Jørn M.
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Jeppesen, Palle
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Oxenløwe, Leif K.
1c01e3f5-29bd-4a4d-8707-ad9b76cf7462
Hu, Hao, Ji, Hua, Galili, Michael, Pu, Minhao, Peucheret, Christophe, Mulvad, Hans C.H., Yvind, Kresten, Hvam, Jørn M., Jeppesen, Palle and Oxenløwe, Leif K.
(2011)
Ultra-high-speed wavelength conversion in a silicon photonic chip.
Optics Express, 19 (21), .
(doi:10.1364/OE.19.019886).
Abstract
We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ∼110 fJ/bit. The waveguide dispersion of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton-absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips with high data integrity and indicate that high-speed operation can be obtained at moderate power levels where nonlinear absorption due to TPA and free-carrier absorption (FCA) is not detrimental. This demonstration can potentially enable highspeed optical networks on a silicon photonic chip.
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Published date: 10 October 2011
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Local EPrints ID: 456306
URI: http://eprints.soton.ac.uk/id/eprint/456306
ISSN: 1094-4087
PURE UUID: 4feb59e1-4d33-44fc-8b0c-2c99381c3ac7
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Date deposited: 27 Apr 2022 02:10
Last modified: 17 Mar 2024 03:38
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Author:
Hao Hu
Author:
Hua Ji
Author:
Michael Galili
Author:
Minhao Pu
Author:
Christophe Peucheret
Author:
Kresten Yvind
Author:
Jørn M. Hvam
Author:
Palle Jeppesen
Author:
Leif K. Oxenløwe
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