SiN/SOI sub-dB butt-coupling scheme in the O-band
SiN/SOI sub-dB butt-coupling scheme in the O-band
The monolithic integration of micro-metric silicon nitride and silicon-on-insulator platforms is presented. We demonstrate an interconnection of sub-dB coupling loss and less than -16dB back-reflection for operation in the O-band.
Skandalos, Ilias
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Domínguez Bucio, Thalía
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Mastronardi, Lorenzo
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Rutirawut, Teerapat
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Gardes, Frederic Y.
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Skandalos, Ilias
3daa2bbe-f6ee-4b6e-ac57-46df0c21c732
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Mastronardi, Lorenzo
ea0aef76-de7e-4bdc-85be-1dc62dbf7802
Rutirawut, Teerapat
590101f7-65c8-4da3-9a5d-e3d2efd74349
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Skandalos, Ilias, Domínguez Bucio, Thalía, Mastronardi, Lorenzo, Rutirawut, Teerapat and Gardes, Frederic Y.
(2022)
SiN/SOI sub-dB butt-coupling scheme in the O-band.
In Photonics North 2022 (PN).
IEEE.
1 pp
.
(doi:10.1109/PN56061.2022.9908356).
Record type:
Conference or Workshop Item
(Paper)
Abstract
The monolithic integration of micro-metric silicon nitride and silicon-on-insulator platforms is presented. We demonstrate an interconnection of sub-dB coupling loss and less than -16dB back-reflection for operation in the O-band.
Text
255-4AW7-282
- Accepted Manuscript
More information
Accepted/In Press date: 1 April 2022
e-pub ahead of print date: 10 October 2022
Venue - Dates:
Photonics North, Niagara Falls Convention Centre, Niagara Falls, Canada, 2022-05-24 - 2022-05-26
Identifiers
Local EPrints ID: 456793
URI: http://eprints.soton.ac.uk/id/eprint/456793
PURE UUID: b8dc8a35-d482-4a9f-884f-b5a1cac46a36
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Date deposited: 11 May 2022 16:46
Last modified: 09 Oct 2024 02:12
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