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Thermoelectric properties and transport mechanism of Cu0.5In0.5Cr2Se4 and its Zn-doped samples

Thermoelectric properties and transport mechanism of Cu0.5In0.5Cr2Se4 and its Zn-doped samples
Thermoelectric properties and transport mechanism of Cu0.5In0.5Cr2Se4 and its Zn-doped samples
The thermoelectric properties and transport mechanism of Cu0.5In0.5Cr2Se4 and its Zn-doped samples were studied. In the middle and low temperature range, the electrical resistivity of Cu0.5In0.5Cr2Se4 decreases and Seebeck coefficient increases with the increase of temperature, indicating the fixed range hopping behavior of Anderson's localization. Two abnormal declines emerge simultaneously in resistivity and Seebeck coefficient at high temperatures, indicating a band regulation by temperature. After slight Zn-doping, the carrier concentration decreases slightly and the carrier mobility increases obviously, realizing electron delocalization. Both of resistivity and Seebeck coefficient decrease with further increasing Zn doping content due to the enhanced carrier concentration, resulting in the improved power factor. The thermal conductivity is extremely low in the pristine Cu0.5In0.5Cr2Se4 and increases with increasing Zn-doping. Due to the significant enlargement of power factor and relatively weak increase of thermal conductivity, the ZT value is enhanced by Zn doping from 0.30 of the pristine sample to 0.40 for the sample with 3.5% Zn doping at 773 K. Moreover, a factor of about 60% improvement of the average ZT is reported on the Zn-doped Cu0.5In0.5Cr2Se4 sample, reaching 0.26 over the temperature range between 323 K and 773 K.
Electrical transport, Electronic localization, Spinel, Thermoelectric materials
0925-8388
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Bai, Xuemin
106eb5b6-6f3a-4c4f-a09e-d9e2d63cdcdc
Sun, Yuqing
2de5f9de-6bb4-4910-b32b-b1122550be45
Yu, Fang
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Liu, Jian
03c42a59-6f39-4069-a4b0-464958554e96
Zhao, Lanling
1957744e-5416-4de4-ab34-19a23be6c0fe
Wang, Chun-ming
dde051a0-20e0-4ea0-863d-5710b23ecf0f
Xia, Shengqing
e32ca4e6-c3ff-4774-b7b2-9cbd0f9b9205
Li, Jichao
3bcd5d5b-c716-4444-bd17-db671ea08993
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Bai, Xuemin
106eb5b6-6f3a-4c4f-a09e-d9e2d63cdcdc
Sun, Yuqing
2de5f9de-6bb4-4910-b32b-b1122550be45
Yu, Fang
dcf63393-7c47-490c-89b7-93c5b2814451
Liu, Jian
03c42a59-6f39-4069-a4b0-464958554e96
Zhao, Lanling
1957744e-5416-4de4-ab34-19a23be6c0fe
Wang, Chun-ming
dde051a0-20e0-4ea0-863d-5710b23ecf0f
Xia, Shengqing
e32ca4e6-c3ff-4774-b7b2-9cbd0f9b9205
Li, Jichao
3bcd5d5b-c716-4444-bd17-db671ea08993

Huang, Ruomeng, Bai, Xuemin, Sun, Yuqing, Yu, Fang, Liu, Jian, Zhao, Lanling, Wang, Chun-ming, Xia, Shengqing and Li, Jichao (2022) Thermoelectric properties and transport mechanism of Cu0.5In0.5Cr2Se4 and its Zn-doped samples. Journal of Alloys and Compounds, 910, [164955]. (doi:10.1016/j.jallcom.2022.164955).

Record type: Article

Abstract

The thermoelectric properties and transport mechanism of Cu0.5In0.5Cr2Se4 and its Zn-doped samples were studied. In the middle and low temperature range, the electrical resistivity of Cu0.5In0.5Cr2Se4 decreases and Seebeck coefficient increases with the increase of temperature, indicating the fixed range hopping behavior of Anderson's localization. Two abnormal declines emerge simultaneously in resistivity and Seebeck coefficient at high temperatures, indicating a band regulation by temperature. After slight Zn-doping, the carrier concentration decreases slightly and the carrier mobility increases obviously, realizing electron delocalization. Both of resistivity and Seebeck coefficient decrease with further increasing Zn doping content due to the enhanced carrier concentration, resulting in the improved power factor. The thermal conductivity is extremely low in the pristine Cu0.5In0.5Cr2Se4 and increases with increasing Zn-doping. Due to the significant enlargement of power factor and relatively weak increase of thermal conductivity, the ZT value is enhanced by Zn doping from 0.30 of the pristine sample to 0.40 for the sample with 3.5% Zn doping at 773 K. Moreover, a factor of about 60% improvement of the average ZT is reported on the Zn-doped Cu0.5In0.5Cr2Se4 sample, reaching 0.26 over the temperature range between 323 K and 773 K.

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CuInCrSe-revised4 - Accepted Manuscript
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Accepted/In Press date: 8 April 2022
e-pub ahead of print date: 11 April 2022
Published date: 25 July 2022
Additional Information: Funding Information: This work was supported by the National Science Foundation of Shandong Province , China (Grant No. ZR2018MEM015 ), National Natural Science Foundation of China (Grant No. 51872166 ), Shandong Provincial Natural Science Foundation-Quantum Science Research Joint fund (Grant No. ZR2020LLZ006 ), Shandong University Seed Fund Program for International Research Cooperation , the Fundamental Research Funds for the Central Universities and EPSRC IAA funding . Publisher Copyright: © 2022 Elsevier B.V.
Keywords: Electrical transport, Electronic localization, Spinel, Thermoelectric materials

Identifiers

Local EPrints ID: 457715
URI: http://eprints.soton.ac.uk/id/eprint/457715
ISSN: 0925-8388
PURE UUID: e7eaf89a-2a2e-4ee6-bb59-6023c4a27698
ORCID for Ruomeng Huang: ORCID iD orcid.org/0000-0003-1185-635X

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Date deposited: 16 Jun 2022 00:21
Last modified: 11 Apr 2024 04:01

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Contributors

Author: Ruomeng Huang ORCID iD
Author: Xuemin Bai
Author: Yuqing Sun
Author: Fang Yu
Author: Jian Liu
Author: Lanling Zhao
Author: Chun-ming Wang
Author: Shengqing Xia
Author: Jichao Li

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