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CMOS compatible design of photonic nanojet

CMOS compatible design of photonic nanojet
CMOS compatible design of photonic nanojet
PNJs are non-resonant travelling beams with applications in enhanced Raman scattering, coupled resonator optical waveguide, high resolution microscopy, lithography and nonlinear optics. The length and beam width of the PNJ can be controlled by engineering the shape of the dielectric structure as well as by changing the refractive index contrast between the particle and the surrounding medium. The waist of PNJ moves towards the diffracting particle with increase in refractive index, and for refractive indices higher than 2, the waist is inside the particle. This migration of beam waist towards the interior of the particle is the biggest hurdle in on chip PNJ generation, because many CMOS compatible materials, including Silicon has refractive index higher than 2. In this study, we present the design and computational results of a photonic chip made of Silicon that can support PNJ outside the material boundary. We have studied the characteristics of PNJ including the width and length as well as the effect of surrounding medium.
Photonic jet, microlens, nanojet, silicon photonics
0277-786X
SPIE
Murugan, Ganapathy Senthil
a867686e-0535-46cc-ad85-c2342086b25b
Veluthandath, Aneesh Vincent
6a183413-e10f-4374-bc64-a33bf7fd9cfa
Lecler, Sylvain
Astratov, Vasily N
Minin, Igor V
Murugan, Ganapathy Senthil
a867686e-0535-46cc-ad85-c2342086b25b
Veluthandath, Aneesh Vincent
6a183413-e10f-4374-bc64-a33bf7fd9cfa
Lecler, Sylvain
Astratov, Vasily N
Minin, Igor V

Murugan, Ganapathy Senthil and Veluthandath, Aneesh Vincent (2022) CMOS compatible design of photonic nanojet. Lecler, Sylvain, Astratov, Vasily N and Minin, Igor V (eds.) In Mesophotonics: Physics and Systems at Mesoscale. vol. 1215, SPIE.. (doi:10.1117/12.2624336).

Record type: Conference or Workshop Item (Paper)

Abstract

PNJs are non-resonant travelling beams with applications in enhanced Raman scattering, coupled resonator optical waveguide, high resolution microscopy, lithography and nonlinear optics. The length and beam width of the PNJ can be controlled by engineering the shape of the dielectric structure as well as by changing the refractive index contrast between the particle and the surrounding medium. The waist of PNJ moves towards the diffracting particle with increase in refractive index, and for refractive indices higher than 2, the waist is inside the particle. This migration of beam waist towards the interior of the particle is the biggest hurdle in on chip PNJ generation, because many CMOS compatible materials, including Silicon has refractive index higher than 2. In this study, we present the design and computational results of a photonic chip made of Silicon that can support PNJ outside the material boundary. We have studied the characteristics of PNJ including the width and length as well as the effect of surrounding medium.

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SPIE_Photonics-Europe_2022_v2_AVV_full_SMG - Accepted Manuscript
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Accepted/In Press date: 18 January 2022
Published date: 24 May 2022
Additional Information: Funding Information: This work was supported by the UK Engineering and Physical Sciences Research Council (EPSRC grant EP/S03109X/1 & EP/N00762X/1). The authors acknowledge the use of the IRIDIS High Performance Computing Facility, and associated support services at the University of Southampton. Publisher Copyright: © 2022 SPIE
Keywords: Photonic jet, microlens, nanojet, silicon photonics

Identifiers

Local EPrints ID: 457976
URI: http://eprints.soton.ac.uk/id/eprint/457976
ISSN: 0277-786X
PURE UUID: 041740bc-1d4b-44d1-b012-0171d47374c3
ORCID for Ganapathy Senthil Murugan: ORCID iD orcid.org/0000-0002-2733-3273
ORCID for Aneesh Vincent Veluthandath: ORCID iD orcid.org/0000-0003-4306-6723

Catalogue record

Date deposited: 23 Jun 2022 18:02
Last modified: 17 Mar 2024 04:00

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Contributors

Author: Ganapathy Senthil Murugan ORCID iD
Author: Aneesh Vincent Veluthandath ORCID iD
Editor: Sylvain Lecler
Editor: Vasily N Astratov
Editor: Igor V Minin

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