Radiofrequency Schottky diodes based on p-doped copper(I) thiocyanate (CuSCN)
Radiofrequency Schottky diodes based on p-doped copper(I) thiocyanate (CuSCN)
Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities of existing p-type semiconducting materials that are compatible with low-temperature, flexible, substrate-friendly processes. Herein, we report on CuSCN Schottky diodes, where the semiconductor is processed from solution, featuring coplanar Al–Au nanogap electrodes (<15 nm), patterned via adhesion lithography. The abundant CuSCN material is doped with the molecular p-type dopant fluorofullerene C60F48 to improve the diode’s operating characteristics. Rectifier circuits fabricated with the doped CuSCN/C60F48 diodes exhibit a 30-fold increase in the cutoff frequency as compared to pristine CuSCN diodes (from 140 kHz to 4 MHz), while they are able to deliver output voltages of >100 mV for a VIN = ±5 V at the commercially relevant frequency of 13.56 MHz. The enhanced diode and circuit performance is attributed to the improved charge transport across CuSCN induced by C60F48. The ensuing diode technology can be used in flexible complementary circuits targeting low-energy-budget applications for the emerging internet of things device ecosystem.
NFC, RFID, high-frequency rectifiers, molecular doping, nanogap electrodes, p-type diodes
29993–29999
Georgiadou, Dimitra
84977176-3678-4fb3-a3dd-2044a49c853b
Wijeyasinghe, Nilushi
912ad8f8-0645-44c4-a77e-0b7e920f6b2c
Solomeshch, Olga
5949455e-abc9-4aad-947e-8918ed98e3d1
Tessler, Nir
7d43ba65-4a83-4978-9374-29d958190647
Anthopoulos, Thomas D.
d6ee9390-d991-4277-a721-030f22d614c9
6 July 2022
Georgiadou, Dimitra
84977176-3678-4fb3-a3dd-2044a49c853b
Wijeyasinghe, Nilushi
912ad8f8-0645-44c4-a77e-0b7e920f6b2c
Solomeshch, Olga
5949455e-abc9-4aad-947e-8918ed98e3d1
Tessler, Nir
7d43ba65-4a83-4978-9374-29d958190647
Anthopoulos, Thomas D.
d6ee9390-d991-4277-a721-030f22d614c9
Georgiadou, Dimitra, Wijeyasinghe, Nilushi, Solomeshch, Olga, Tessler, Nir and Anthopoulos, Thomas D.
(2022)
Radiofrequency Schottky diodes based on p-doped copper(I) thiocyanate (CuSCN).
ACS Applied Materials and Interfaces, 14 (26), .
(doi:10.1021/acsami.1c22856).
Abstract
Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities of existing p-type semiconducting materials that are compatible with low-temperature, flexible, substrate-friendly processes. Herein, we report on CuSCN Schottky diodes, where the semiconductor is processed from solution, featuring coplanar Al–Au nanogap electrodes (<15 nm), patterned via adhesion lithography. The abundant CuSCN material is doped with the molecular p-type dopant fluorofullerene C60F48 to improve the diode’s operating characteristics. Rectifier circuits fabricated with the doped CuSCN/C60F48 diodes exhibit a 30-fold increase in the cutoff frequency as compared to pristine CuSCN diodes (from 140 kHz to 4 MHz), while they are able to deliver output voltages of >100 mV for a VIN = ±5 V at the commercially relevant frequency of 13.56 MHz. The enhanced diode and circuit performance is attributed to the improved charge transport across CuSCN induced by C60F48. The ensuing diode technology can be used in flexible complementary circuits targeting low-energy-budget applications for the emerging internet of things device ecosystem.
Text
acsami.1c22856
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More information
Accepted/In Press date: 16 May 2022
e-pub ahead of print date: 1 June 2022
Published date: 6 July 2022
Additional Information:
Funding Information:
T.D.A. acknowledges the support from the King Abdullah University of Science and Technology (KAUST) Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079 and No: OSR-2019-CRG8-4095.3 and from the European Research Council (ERC) AMPRO (Grant No. 280221). D.G.G. acknowledges the financial support from the European Union Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement 706707.
Publisher Copyright:
© 2022 American Chemical Society. All rights reserved.
Keywords:
NFC, RFID, high-frequency rectifiers, molecular doping, nanogap electrodes, p-type diodes
Identifiers
Local EPrints ID: 458022
URI: http://eprints.soton.ac.uk/id/eprint/458022
ISSN: 1944-8244
PURE UUID: 5c7837ce-f900-4ac5-a04a-c172c0c29455
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Date deposited: 24 Jun 2022 21:49
Last modified: 12 Nov 2024 03:04
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Contributors
Author:
Nilushi Wijeyasinghe
Author:
Olga Solomeshch
Author:
Nir Tessler
Author:
Thomas D. Anthopoulos
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