Static and dynamic studies of materials and processes using ellipsometry

Gray, Dilys Eira (1996) Static and dynamic studies of materials and processes using ellipsometry. University of Southampton, Doctoral Thesis.

Abstract

Thin film multilayer structures have been characterised fully using time-resolved and static studies monitored with monochromatic and spectroscopic ellipsometry.

In-situ monochromatic ellipsometric monitoring of the etch of a semiconductor-on-insulator structure (SIMOX) gave further information on any defects present in the structure above that provided by ex-situ spectroscopic readings on the complete structure. Samples seen to be perfect using the spectroscopic readings were confirmed perfect during etching but samples which were thought to be slightly imperfect using the spectroscopic technique were seen to be highly defect on etching.

Dual-wavelength ellipsometry monitoring the CVD growth of Si/Ge thin films (used in heterojunction structures) gave information on changes in crystallographic strain. It was noted that an initial growth layer occurred on deposition of the Si/Ge layer which was attributed to abnormal strain on initial binding or altered germanium composition at a surface rather than nucleation. Ex-situ spectroscopic readings supported in-situ results.

The immobilisation of DNA on a nitrocellulose coated solid substrate and the hybridisation of oligomer proves to this DNA was monitored statically and dynamically using ellipsometry. Characterisation of the reaction was achieved indicating that immobilised DNA strands possess structure (possibly helical) and that probes hybridise within this structure rather than on top of it. The ellipsomtric results were compared with chemiluminescent labelling, a known hybridisation detection technique which provided semi-quantitative detection of specific sequences in a DNA strand.

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