MOSFET flicker noise : its characterisation and its origins
MOSFET flicker noise : its characterisation and its origins
This thesis reports on the author's work, which had the aim of characterising and understanding the low frequency noise of silicon MOSFETs. The introductory chapters include comprehensive literature surveys of both MOSFET noise theories and experimental findings. In the main body of the thesis, novel experimental results are presented including the observations of a hysteresis type of generation-recombination (GR) noise, a rise in noise associated with rapid thermal processing and firm evidence that threshold adjustment implantation can alter the relative sizes of the noise in p- and n-channel MOSFETs. Existing noise theories were modified and adapted to allow the extraction of bulk and oxide defect parameters. This included a revised hypothesis of the noise mechanism responsible for bulk GR noise which was demonstrated to be a significant improvement over existing theories. Consistent interpretations are given for almost all of the observed phenomena, including the MOSFET noise dependencies upon bias and temperature. The partially successful attempt to model the influence of using a threshold implant is also chronicled. Finally suggestions for future work of a similar nature are presented and discussed.
University of Southampton
1992
Murray, David Colin
(1992)
MOSFET flicker noise : its characterisation and its origins.
University of Southampton, Doctoral Thesis.
Record type:
Thesis
(Doctoral)
Abstract
This thesis reports on the author's work, which had the aim of characterising and understanding the low frequency noise of silicon MOSFETs. The introductory chapters include comprehensive literature surveys of both MOSFET noise theories and experimental findings. In the main body of the thesis, novel experimental results are presented including the observations of a hysteresis type of generation-recombination (GR) noise, a rise in noise associated with rapid thermal processing and firm evidence that threshold adjustment implantation can alter the relative sizes of the noise in p- and n-channel MOSFETs. Existing noise theories were modified and adapted to allow the extraction of bulk and oxide defect parameters. This included a revised hypothesis of the noise mechanism responsible for bulk GR noise which was demonstrated to be a significant improvement over existing theories. Consistent interpretations are given for almost all of the observed phenomena, including the MOSFET noise dependencies upon bias and temperature. The partially successful attempt to model the influence of using a threshold implant is also chronicled. Finally suggestions for future work of a similar nature are presented and discussed.
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Published date: 1992
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Local EPrints ID: 461312
URI: http://eprints.soton.ac.uk/id/eprint/461312
PURE UUID: cbcbddb5-291a-4096-885d-03ac3438a4ee
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Date deposited: 04 Jul 2022 18:42
Last modified: 04 Jul 2022 18:42
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Author:
David Colin Murray
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