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Studies of CdTe electrodeposition

Studies of CdTe electrodeposition
Studies of CdTe electrodeposition

The electrocrystallization and growth of Te and CdTe under potentiostatic conditions have been studied using the theories developed for the electrocrystallization of metals on foreign substrates. The electrodeposition of Te on glassy carbon and of CdTe on tin oxide coated glass take place by progressive nucleation/three dimensional growth under diffusion control, whereas the electrodeposition of CdTe on monocrystalline silicon takes place by instantaneous nucleation/two dimensional growth under kinetic control.

From considerations of progressive nucleation/three dimensional growth under diffusion control, a new analytical equation to express increase in current with deposition time is proposed. The dependence of saturation nuclear number density on temperature is also discussed. Computer simulations of instantaneous nucleation/hemispherical growth under diffusion control have been carried out using the three dimensional diffusion limited aggregation technique. The simulated current transients are compared to analytical expressions. Photoeffects during electrodeposition have also been studied. The results show that the CdTe deposit behaves as an amorphous insulator with a high density of bandgap states.

University of Southampton
Sugimoto, Yoshiharu
f75e0b5f-30ee-4770-9abf-c3d30f4f9faa
Sugimoto, Yoshiharu
f75e0b5f-30ee-4770-9abf-c3d30f4f9faa

Sugimoto, Yoshiharu (1993) Studies of CdTe electrodeposition. University of Southampton, Doctoral Thesis.

Record type: Thesis (Doctoral)

Abstract

The electrocrystallization and growth of Te and CdTe under potentiostatic conditions have been studied using the theories developed for the electrocrystallization of metals on foreign substrates. The electrodeposition of Te on glassy carbon and of CdTe on tin oxide coated glass take place by progressive nucleation/three dimensional growth under diffusion control, whereas the electrodeposition of CdTe on monocrystalline silicon takes place by instantaneous nucleation/two dimensional growth under kinetic control.

From considerations of progressive nucleation/three dimensional growth under diffusion control, a new analytical equation to express increase in current with deposition time is proposed. The dependence of saturation nuclear number density on temperature is also discussed. Computer simulations of instantaneous nucleation/hemispherical growth under diffusion control have been carried out using the three dimensional diffusion limited aggregation technique. The simulated current transients are compared to analytical expressions. Photoeffects during electrodeposition have also been studied. The results show that the CdTe deposit behaves as an amorphous insulator with a high density of bandgap states.

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Published date: 1993

Identifiers

Local EPrints ID: 462361
URI: http://eprints.soton.ac.uk/id/eprint/462361
PURE UUID: 4ba9e60f-a504-45fb-a31c-b1585341a9e0

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Date deposited: 04 Jul 2022 19:06
Last modified: 16 Mar 2024 18:55

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Author: Yoshiharu Sugimoto

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