Characteristics and parameter extraction of Silicon-On-Insulator MOSFETS for analogue circuit modelling
Characteristics and parameter extraction of Silicon-On-Insulator MOSFETS for analogue circuit modelling
The aims of the work presented in this thesis are twofold: to characterise the dynamic behaviour of SOI MOSFETs over a wide range of frequencies; and to develop accurate techniques for extracting physical parameters required for the compact modelling of parasitic effects in SOI MOSFETs, for application to analogue circuit design.
Small-signal drain conductance techniques are developed as a useful tool for the analysis of the dynamic behaviour of SOI MOSFETs over a wide range of frequencies; these are particularly relevant to analogue applications, because the MOSFET output conductance is an important parameter in the design of amplifiers and other circuits. These small-signal measurements are then used to investigate dynamic floating body and self-heating effects, and to provide a basis for the development of new parameter extraction techniques.
Novel parameter extraction techniques presented in this thesis include a technique to extract the partially depleted SOI film thicknesses, methods to characterise the physical elements contributing to floating body behaviour in partially depleted SOI MOSFETs, a technique to extract the thermal resistance and capacitance parameters required for the physical modelling of dynamic self-heating effects, and techniques for the characterisation of static and dynamic thermal coupling between MOSFETs in close proximity. These new parameter extraction techniques, together with well-known techniques developed for bulk MOSFETs, provide all elements required to compile a comprehensive parameter extraction methodology for the physically based, partially depleted SOI MOSFET model developed at Southampton University (STAG).
Finally, the significance of self-heating and thermal coupling effects on the operation of several frequently used analogue circuits is investigated. The applications discussed are a 7-bit current steering D/A converter, current controlled ring oscillators and various current mirror layouts in a typical 0.7 μm PD SOI CMOS technology. It is shown that localised heating effects have a significant influence on the linearity of the D/A converter and the matching of the current mirrors, but are less important for the high frequency oscillator circuits.
University of Southampton
1997
Tenbroek, Bernard Mark
(1997)
Characteristics and parameter extraction of Silicon-On-Insulator MOSFETS for analogue circuit modelling.
University of Southampton, Doctoral Thesis.
Record type:
Thesis
(Doctoral)
Abstract
The aims of the work presented in this thesis are twofold: to characterise the dynamic behaviour of SOI MOSFETs over a wide range of frequencies; and to develop accurate techniques for extracting physical parameters required for the compact modelling of parasitic effects in SOI MOSFETs, for application to analogue circuit design.
Small-signal drain conductance techniques are developed as a useful tool for the analysis of the dynamic behaviour of SOI MOSFETs over a wide range of frequencies; these are particularly relevant to analogue applications, because the MOSFET output conductance is an important parameter in the design of amplifiers and other circuits. These small-signal measurements are then used to investigate dynamic floating body and self-heating effects, and to provide a basis for the development of new parameter extraction techniques.
Novel parameter extraction techniques presented in this thesis include a technique to extract the partially depleted SOI film thicknesses, methods to characterise the physical elements contributing to floating body behaviour in partially depleted SOI MOSFETs, a technique to extract the thermal resistance and capacitance parameters required for the physical modelling of dynamic self-heating effects, and techniques for the characterisation of static and dynamic thermal coupling between MOSFETs in close proximity. These new parameter extraction techniques, together with well-known techniques developed for bulk MOSFETs, provide all elements required to compile a comprehensive parameter extraction methodology for the physically based, partially depleted SOI MOSFET model developed at Southampton University (STAG).
Finally, the significance of self-heating and thermal coupling effects on the operation of several frequently used analogue circuits is investigated. The applications discussed are a 7-bit current steering D/A converter, current controlled ring oscillators and various current mirror layouts in a typical 0.7 μm PD SOI CMOS technology. It is shown that localised heating effects have a significant influence on the linearity of the D/A converter and the matching of the current mirrors, but are less important for the high frequency oscillator circuits.
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Published date: 1997
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Local EPrints ID: 463609
URI: http://eprints.soton.ac.uk/id/eprint/463609
PURE UUID: 0d49f147-44e4-4d3a-8008-de1d49f5b8dd
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Date deposited: 04 Jul 2022 20:54
Last modified: 04 Jul 2022 20:54
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Author:
Bernard Mark Tenbroek
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