Best use of bipolar transistors in the radiation environments of the nuclear power industry

Abstract

The effects of exposure to high total doses of gamma radiation have been investigated for bipolar transistors. DC point measurements, current-voltage and capacitance-voltage techniques have been used to characterise the response of a number of commercially produced devices and to compare their radiation-induced changes in performance with those exhibited by a set of specially fabricated transistors with known geometry and process history. Irradiation was carried out with cobalt-60 sources at dose rates typical of the radiation environments found in nuclear power industry facilities and at total doses of up to 1 MGy.

Substantial changes in several of the measured parameters were found, particularly gain and saturation voltage. Leakage currents and breakdown voltages were less severely affected. Gain was noted, in some cases, to show a slight increase at high total doses, after the initial degradation. This has been linked to changes in surface conditions brought about the irradiation. Significant differences were found between the response of devices biased during irradiation and those left unbiased. This has considerable implications for the use of bipolar transistors in equipment destined for applications in these environments and a series of recommendations for designers is presented.

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