Single spin sensing in silicon p-type Metal-Oxide-Semiconductor Field-Effect Transistors.
Single spin sensing in silicon p-type Metal-Oxide-Semiconductor Field-Effect Transistors.
We analyse single hole spin interactions of disorder based quantum dots in p type silicon MOSFET devices at a temperature of T = 2 K. Through the formation of a double quantum dot system exhibiting Pauli spin blockade, we characterize the magnetic field dependence of the leakage current to estimate a spin orbit le ngth of l SO = 300 nm. This provides support for fast electrical control of single hole spin via a strong spin orbit interaction using a readily scalable platform such as industry silicon MOSFE T technology for future quantum information processing applications.
https://underline.io/lecture/3193-single-spin-sensing-in-silicon-p-type-metal-oxide-semiconductor-field-effect-transistors-
Hillier, Joseph, William
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Ono, Keiji
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Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Li, Zuo
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Husain, Muhammad K
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Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
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Ishibashi, K.
00663ab7-1cdb-4ab9-a9c3-36d80f17a727
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
18 October 2020
Hillier, Joseph, William
3621050b-74de-4fb7-b1ee-968965966336
Ono, Keiji
5c1cfe3a-9c61-4baa-8521-920ac56a0137
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Husain, Muhammad K
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Ishibashi, K.
00663ab7-1cdb-4ab9-a9c3-36d80f17a727
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Hillier, Joseph, William, Ono, Keiji, Ibukuro, Kouta, Liu, Fayong, Li, Zuo, Husain, Muhammad K, Rutt, Harvey, Tomita, Isao, Tsuchiya, Yoshishige, Ishibashi, K. and Saito, Shinichi
(2020)
Single spin sensing in silicon p-type Metal-Oxide-Semiconductor Field-Effect Transistors.
Quantum 2020: IOP Quantum 2020, Online, Online, China.
19 - 22 Oct 2020.
(https://underline.io/lecture/3193-single-spin-sensing-in-silicon-p-type-metal-oxide-semiconductor-field-effect-transistors-).
Record type:
Conference or Workshop Item
(Poster)
Abstract
We analyse single hole spin interactions of disorder based quantum dots in p type silicon MOSFET devices at a temperature of T = 2 K. Through the formation of a double quantum dot system exhibiting Pauli spin blockade, we characterize the magnetic field dependence of the leakage current to estimate a spin orbit le ngth of l SO = 300 nm. This provides support for fast electrical control of single hole spin via a strong spin orbit interaction using a readily scalable platform such as industry silicon MOSFE T technology for future quantum information processing applications.
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Published date: 18 October 2020
Venue - Dates:
Quantum 2020: IOP Quantum 2020, Online, Online, China, 2020-10-19 - 2020-10-22
Identifiers
Local EPrints ID: 467500
URI: http://eprints.soton.ac.uk/id/eprint/467500
DOI: https://underline.io/lecture/3193-single-spin-sensing-in-silicon-p-type-metal-oxide-semiconductor-field-effect-transistors-
PURE UUID: a235ff5c-42b6-4164-945c-ae250f23bffb
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Date deposited: 12 Jul 2022 16:30
Last modified: 17 Mar 2024 03:29
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Contributors
Author:
Joseph, William Hillier
Author:
Keiji Ono
Author:
Kouta Ibukuro
Author:
Fayong Liu
Author:
Zuo Li
Author:
Muhammad K Husain
Author:
Harvey Rutt
Author:
Isao Tomita
Author:
Yoshishige Tsuchiya
Author:
K. Ishibashi
Author:
Shinichi Saito
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