On-chip sub-wavelength Bragg grating design based on novel low loss phase-change materials
On-chip sub-wavelength Bragg grating design based on novel low loss phase-change materials
We propose a reconfigurable and non-volatile Bragg grating in the telecommunication C-band based on the combination of novel low-loss phase-change materials (specifically Ge2Sb2Se4Te1 and Sb2S3) with a silicon nitride platform. The Bragg grating is formed by arrayed cells of phase-change material, whose crystallisation fraction modifies the Bragg wavelength and extinction ratio. These devices could be used in integrated photonic circuits for optical communications applications in smart filters and Bragg mirrors and could also find use in tuneable ring resonators, Mach–Zehnder interferometers or frequency selectors for future laser on chip applications. In the case of Ge2Sb2Se4Te1, crystallisation produces a Bragg resonance shift up to ∼ 15 nm, accompanied with a large amplitude modulation (insertion loss of 22 dB). Using Sb2S3, low losses are presented in both states of the phase change material, obtaining a ∼ 7 nm red-shift in the Bragg wavelength. The gratings are evaluated for two period numbers, 100 and 200 periods. The number of periods determines the bandwidth and extinction ratio of the filters. Increasing the number of periods increases the extinction ratio and reflected power, also narrowing the bandwidth. This results in a trade-off between device size and performance. Finally, we combine both phase-change materials in a single Bragg grating to provide both frequency and amplitude modulation. A defect is introduced in the Sb2S3 Bragg grating, producing a high quality factor resonance (Q ∼ 104) which can be shifted by 7 nm via crystallisation. A GSST cell is then placed in the defect which can modulate the transmission amplitude from low loss to below -16 dB.
16394-16406
Faneca, Joaquin
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Trimby, Liam
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Zeimpekis, Ioannis
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Delaney, Matthew
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Hewak, Daniel W.
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Gardes, Frederic Y.
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Wright, C. David
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Baldycheva, Anna
cd4d0080-e4a8-4684-94a1-6ebacf012b32
25 May 2020
Faneca, Joaquin
03751f71-8e60-4d95-849b-a6f03b2e4051
Trimby, Liam
30a3244b-e12f-4af1-a5c7-0aaccbfdc6d1
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Delaney, Matthew
46e88672-435e-4f50-8df2-2aed6f3edbcd
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Wright, C. David
5b1b62da-6d15-4fba-be96-2da9a6b1f337
Baldycheva, Anna
cd4d0080-e4a8-4684-94a1-6ebacf012b32
Faneca, Joaquin, Trimby, Liam, Zeimpekis, Ioannis, Delaney, Matthew, Hewak, Daniel W., Gardes, Frederic Y., Wright, C. David and Baldycheva, Anna
(2020)
On-chip sub-wavelength Bragg grating design based on novel low loss phase-change materials.
Optics Express, 28 (11), .
(doi:10.1364/OE.389598).
Abstract
We propose a reconfigurable and non-volatile Bragg grating in the telecommunication C-band based on the combination of novel low-loss phase-change materials (specifically Ge2Sb2Se4Te1 and Sb2S3) with a silicon nitride platform. The Bragg grating is formed by arrayed cells of phase-change material, whose crystallisation fraction modifies the Bragg wavelength and extinction ratio. These devices could be used in integrated photonic circuits for optical communications applications in smart filters and Bragg mirrors and could also find use in tuneable ring resonators, Mach–Zehnder interferometers or frequency selectors for future laser on chip applications. In the case of Ge2Sb2Se4Te1, crystallisation produces a Bragg resonance shift up to ∼ 15 nm, accompanied with a large amplitude modulation (insertion loss of 22 dB). Using Sb2S3, low losses are presented in both states of the phase change material, obtaining a ∼ 7 nm red-shift in the Bragg wavelength. The gratings are evaluated for two period numbers, 100 and 200 periods. The number of periods determines the bandwidth and extinction ratio of the filters. Increasing the number of periods increases the extinction ratio and reflected power, also narrowing the bandwidth. This results in a trade-off between device size and performance. Finally, we combine both phase-change materials in a single Bragg grating to provide both frequency and amplitude modulation. A defect is introduced in the Sb2S3 Bragg grating, producing a high quality factor resonance (Q ∼ 104) which can be shifted by 7 nm via crystallisation. A GSST cell is then placed in the defect which can modulate the transmission amplitude from low loss to below -16 dB.
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More information
Accepted/In Press date: 1 April 2020
e-pub ahead of print date: 15 May 2020
Published date: 25 May 2020
Additional Information:
Journal © 2020
Identifiers
Local EPrints ID: 467582
URI: http://eprints.soton.ac.uk/id/eprint/467582
ISSN: 1094-4087
PURE UUID: 703c40ea-b81b-4d5c-a1a3-0f993264c582
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Date deposited: 14 Jul 2022 17:09
Last modified: 21 Sep 2024 01:46
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Contributors
Author:
Joaquin Faneca
Author:
Liam Trimby
Author:
Matthew Delaney
Author:
Frederic Y. Gardes
Author:
C. David Wright
Author:
Anna Baldycheva
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