Rapid and up-scalable manufacturing of gigahertz nanogap diodes

Loganathan, Kalaivanan, Faber, Hendrik, Yengel, Emre, Seitkhan, Akmaral, Bakytbekov, Azamat, Yarali, Emre, Adilbekova, Begimai, AlBatati, Afnan, Lin, Yuanbao, Felemban, Zainab, Yang, Shuai, Li, Weiwei, Georgiadou, Dimitra G., Shamim, Atif, Lidorikis, Elefterios and Anthopoulos, Thomas D. (2022) Rapid and up-scalable manufacturing of gigahertz nanogap diodes. Nature Communications, 13 (1), [3260]. (doi:10.1038/s41467-022-30876-6).

Abstract

The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned <10 nm nanogaps and flash-lamp annealing to demonstrate rapid manufacturing of nanogap Schottky diodes over arbitrary size substrates operating in 5 G frequencies. These diodes combine low junction capacitance with low turn-on voltage while exhibiting cut-off frequencies (intrinsic) of >100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest large-area electronic devices demonstrated to date.

This record has no associated files available for download.

Contributors

Author: Dimitra G. Georgiadou

Download statistics