Surface/interface engineering InAs quantum-dot based edge-emitting LED for III-V/SiN photonic integrations
Surface/interface engineering InAs quantum-dot based edge-emitting LED for III-V/SiN photonic integrations
Edge-emitting LEDs (ELEDs) possess a high brightness, a high coupling efficiency/tolerance to optical fibres compared with surface-emitting LEDs; whilst a simple structure for fabrication with a low cost compared with their coherent counterparts (i.e., lasers). Therefore, it is a good candidate for short-reach optical communications, optic gyroscopes, gain material for external-cavity lasers, and photonic integrated platforms. Recent breakthrough in InAs quantum-dot (QD) grown on various substrates with emission wavelength in O-band range enables the development of high-brightness ELEDs, including super-luminescent LEDs. In order to efficiently couple the emitting light out of an ELED, an anti-reflection coating (ARC) layer is required. Ideally, the ARC layer is also expected to be a passivation layer to reduce non-radiative recombination and to enhance the device lifetime, which is especially important for the edge-coupling scheme. In this case, the materials are requested to have both the desired refractive index and correct chemical property.
Hou, Yaonan
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Skandalos, Ilias
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Noori, Yasir
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Gardes, Frederic
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Tang, Mingchu
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Seeds, Alwyn
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Liu, Huiyun
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Hou, Yaonan
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Skandalos, Ilias
3daa2bbe-f6ee-4b6e-ac57-46df0c21c732
Noori, Yasir
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Gardes, Frederic
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Tang, Mingchu
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Seeds, Alwyn
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Liu, Huiyun
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Hou, Yaonan, Skandalos, Ilias, Noori, Yasir, Gardes, Frederic, Tang, Mingchu, Seeds, Alwyn and Liu, Huiyun
(2022)
Surface/interface engineering InAs quantum-dot based edge-emitting LED for III-V/SiN photonic integrations.
In UK Semiconductor Meeting.
(In Press)
Record type:
Conference or Workshop Item
(Paper)
Abstract
Edge-emitting LEDs (ELEDs) possess a high brightness, a high coupling efficiency/tolerance to optical fibres compared with surface-emitting LEDs; whilst a simple structure for fabrication with a low cost compared with their coherent counterparts (i.e., lasers). Therefore, it is a good candidate for short-reach optical communications, optic gyroscopes, gain material for external-cavity lasers, and photonic integrated platforms. Recent breakthrough in InAs quantum-dot (QD) grown on various substrates with emission wavelength in O-band range enables the development of high-brightness ELEDs, including super-luminescent LEDs. In order to efficiently couple the emitting light out of an ELED, an anti-reflection coating (ARC) layer is required. Ideally, the ARC layer is also expected to be a passivation layer to reduce non-radiative recombination and to enhance the device lifetime, which is especially important for the edge-coupling scheme. In this case, the materials are requested to have both the desired refractive index and correct chemical property.
Text
Abstract_Yaonan Hou_UKSemi_2022
More information
Accepted/In Press date: 19 May 2022
Identifiers
Local EPrints ID: 468235
URI: http://eprints.soton.ac.uk/id/eprint/468235
PURE UUID: 4186867c-42ba-46aa-88f5-7bfde90e8f16
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Date deposited: 08 Aug 2022 16:42
Last modified: 17 Mar 2024 03:52
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Contributors
Author:
Yaonan Hou
Author:
Yasir Noori
Author:
Mingchu Tang
Author:
Alwyn Seeds
Author:
Huiyun Liu
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