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UV-written silicon nitride integrated optical phased arrays

UV-written silicon nitride integrated optical phased arrays
UV-written silicon nitride integrated optical phased arrays

Silicon nitride (SiNx), has been widely regarded as a CMOS photonics enabling material, facilitating the development of low-cost CMOS compatible waveguides and related photonic components. We have previously developed an NH3-free SiN PECVD platform in which its optical properties can be tailored. Here, we report on a new type of surface-emitting nitrogen-rich silicon nitride waveguide with antenna lengths of L > 5 mm. This is achieved by using a technique called small spot direct ultraviolet writing, capable of creating periodic refractive index changes ranging from -0.01 to -0.04. With this arrangement, a weak antenna radiation strength can be achieved, resulting in far-field beam widths < 0.0150, while maintaining a minimum feature size equal to 300 nm, which is compatible with DUV scanner lithography.

Optical phased array, Silicon Nitride, UV laser exposure
0277-786X
SPIE
Ilie, S. T.
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De Paoli, G.
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Flint, A.
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Domínguez Bucio, Thalía
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Ginel-Moreno, P.
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Sagar, J.
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Ortega-Moñux, A.
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Lekkas, K.
e5748e17-ba60-4d91-b8a9-d45e5ff0b7ec
Rutirawut, T.
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Mastronardi, L.
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Skandalos, I.
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Molina-Fernandez, I.
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Kanellos, G. T.
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Cheben, P.
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Smith, P. G.R.
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Gates, J. C.
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Gardes, F. Y.
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He, Sailing
He, Sailing
Vivien, Laurent
Ilie, S. T.
9ff80b2a-1998-41dd-9eed-7b010cbbf3a9
De Paoli, G.
eafc5c8a-e30a-40d1-a57e-0beb7f85af72
Flint, A.
2314a288-92bc-44ca-9627-350eac1a7e26
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Ginel-Moreno, P.
ffd04b01-286b-46c3-9840-c24a0dbe15bd
Sagar, J.
bf69ce22-eb00-47d4-ba18-98c978cff547
Ortega-Moñux, A.
2187ad4e-6b90-4354-83ce-da964b85e0fe
Lekkas, K.
e5748e17-ba60-4d91-b8a9-d45e5ff0b7ec
Rutirawut, T.
590101f7-65c8-4da3-9a5d-e3d2efd74349
Mastronardi, L.
ea0aef76-de7e-4bdc-85be-1dc62dbf7802
Skandalos, I.
3daa2bbe-f6ee-4b6e-ac57-46df0c21c732
Molina-Fernandez, I.
e7b4acfd-266a-410b-b4b6-1a9c482c77a0
Kanellos, G. T.
789b223a-5d1c-48d4-8e9b-40b723c23fff
Cheben, P.
9a2e25a5-6aa0-414e-a061-23416efedebc
Smith, P. G.R.
8979668a-8b7a-4838-9a74-1a7cfc6665f6
Gates, J. C.
b71e31a1-8caa-477e-8556-b64f6cae0dc2
Gardes, F. Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
He, Sailing
He, Sailing
Vivien, Laurent

Ilie, S. T., De Paoli, G., Flint, A., Domínguez Bucio, Thalía, Ginel-Moreno, P., Sagar, J., Ortega-Moñux, A., Lekkas, K., Rutirawut, T., Mastronardi, L., Skandalos, I., Molina-Fernandez, I., Kanellos, G. T., Cheben, P., Smith, P. G.R., Gates, J. C. and Gardes, F. Y. (2022) UV-written silicon nitride integrated optical phased arrays. He, Sailing, He, Sailing and Vivien, Laurent (eds.) In Smart Photonic and Optoelectronic Integrated Circuits 2022. vol. 12005, SPIE.. (doi:10.1117/12.2608824).

Record type: Conference or Workshop Item (Paper)

Abstract

Silicon nitride (SiNx), has been widely regarded as a CMOS photonics enabling material, facilitating the development of low-cost CMOS compatible waveguides and related photonic components. We have previously developed an NH3-free SiN PECVD platform in which its optical properties can be tailored. Here, we report on a new type of surface-emitting nitrogen-rich silicon nitride waveguide with antenna lengths of L > 5 mm. This is achieved by using a technique called small spot direct ultraviolet writing, capable of creating periodic refractive index changes ranging from -0.01 to -0.04. With this arrangement, a weak antenna radiation strength can be achieved, resulting in far-field beam widths < 0.0150, while maintaining a minimum feature size equal to 300 nm, which is compatible with DUV scanner lithography.

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Accepted/In Press date: 5 March 2022
Published date: 2022
Additional Information: Funding Information: The authors acknowledge the support of the Engineering and Physical Sciences Research Council (EPSRC) ( EP/R003076/1, EP/R513325/1, EP/N013247/1) and H2020 ICT-PLASMONIAC. Publisher Copyright: © 2022 SPIE.
Venue - Dates: Smart Photonic and Optoelectronic Integrated Circuits 2022, , Virtual, Online, 2002-02-20 - 2002-02-24
Keywords: Optical phased array, Silicon Nitride, UV laser exposure

Identifiers

Local EPrints ID: 468306
URI: http://eprints.soton.ac.uk/id/eprint/468306
ISSN: 0277-786X
PURE UUID: e5510838-122e-4cf9-b39b-ee82c3d44891
ORCID for A. Flint: ORCID iD orcid.org/0000-0001-5103-0419
ORCID for Thalía Domínguez Bucio: ORCID iD orcid.org/0000-0002-3664-1403
ORCID for L. Mastronardi: ORCID iD orcid.org/0000-0003-1489-2778
ORCID for I. Skandalos: ORCID iD orcid.org/0000-0002-9021-1420
ORCID for P. G.R. Smith: ORCID iD orcid.org/0000-0003-0319-718X
ORCID for J. C. Gates: ORCID iD orcid.org/0000-0001-8671-5987
ORCID for F. Y. Gardes: ORCID iD orcid.org/0000-0003-1400-3272

Catalogue record

Date deposited: 10 Aug 2022 16:30
Last modified: 09 Oct 2024 02:12

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Contributors

Author: S. T. Ilie
Author: G. De Paoli
Author: A. Flint ORCID iD
Author: Thalía Domínguez Bucio ORCID iD
Author: P. Ginel-Moreno
Author: J. Sagar
Author: A. Ortega-Moñux
Author: K. Lekkas
Author: T. Rutirawut
Author: L. Mastronardi ORCID iD
Author: I. Skandalos ORCID iD
Author: I. Molina-Fernandez
Author: G. T. Kanellos
Author: P. Cheben
Author: P. G.R. Smith ORCID iD
Author: J. C. Gates ORCID iD
Author: F. Y. Gardes ORCID iD
Editor: Sailing He
Editor: Sailing He
Editor: Laurent Vivien

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