Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers
Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers
Extreme aspect ratio tubes and wires of polycrystalline silicon and germanium have been deposited within silica microstructured optical fibers using high-pressure precursors, demonstrating the potential of a platform technology for the development of in-fiber optoelectronics. Microstructural studies of the deposited material using Raman spectroscopy show effects due to strain between core and cladding and the presence of amorphous and polycrystalline phases for silicon. Germanium, in contrast, is more crystalline and less strained. This in-fiber device geometry is utilized for two- and three-terminal electrical characterization of the key parameters of resistivity and carrier type, mobility and concentration.
1-3
Finlayson, C.E.
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Amezcua-Correa, A.
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Sazio, P.J.A.
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Baril, N.F.
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Badding, J.V.
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March 2007
Finlayson, C.E.
bcc6c2a7-e346-4b08-93e7-be12c7033dac
Amezcua-Correa, A.
37d5ed27-0225-4375-b843-580f43c591ac
Sazio, P.J.A.
0d6200b5-9947-469a-8e97-9147da8a7158
Baril, N.F.
f5d317cc-48d8-4be0-8f08-5385e700f8bb
Badding, J.V.
940f7adb-73df-4f8a-9c46-e47f5425fef0
Finlayson, C.E., Amezcua-Correa, A., Sazio, P.J.A., Baril, N.F. and Badding, J.V.
(2007)
Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers.
Applied Physics Letters, 90 (132110), .
(doi:10.1063/1.2713755).
Abstract
Extreme aspect ratio tubes and wires of polycrystalline silicon and germanium have been deposited within silica microstructured optical fibers using high-pressure precursors, demonstrating the potential of a platform technology for the development of in-fiber optoelectronics. Microstructural studies of the deposited material using Raman spectroscopy show effects due to strain between core and cladding and the presence of amorphous and polycrystalline phases for silicon. Germanium, in contrast, is more crystalline and less strained. This in-fiber device geometry is utilized for two- and three-terminal electrical characterization of the key parameters of resistivity and carrier type, mobility and concentration.
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Published date: March 2007
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Local EPrints ID: 46894
URI: http://eprints.soton.ac.uk/id/eprint/46894
ISSN: 0003-6951
PURE UUID: ffb6cf97-571e-46ba-9e3c-ea652819ff1a
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Date deposited: 23 Jul 2007
Last modified: 16 Mar 2024 03:26
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Contributors
Author:
C.E. Finlayson
Author:
A. Amezcua-Correa
Author:
N.F. Baril
Author:
J.V. Badding
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