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Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers

Finlayson, C.E., Amezcua-Correa, A., Sazio, P.J.A., Baril, N.F. and Badding, J.V. (2007) Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers Applied Physics Letters, 90, (132110), pp. 1-3. (doi:10.1063/1.2713755).

Record type: Article


Extreme aspect ratio tubes and wires of polycrystalline silicon and germanium have been deposited within silica microstructured optical fibers using high-pressure precursors, demonstrating the potential of a platform technology for the development of in-fiber optoelectronics. Microstructural studies of the deposited material using Raman spectroscopy show effects due to strain between core and cladding and the presence of amorphous and polycrystalline phases for silicon. Germanium, in contrast, is more crystalline and less strained. This in-fiber device geometry is utilized for two- and three-terminal electrical characterization of the key parameters of resistivity and carrier type, mobility and concentration

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Published date: March 2007


Local EPrints ID: 46894
ISSN: 0003-6951
PURE UUID: ffb6cf97-571e-46ba-9e3c-ea652819ff1a
ORCID for P.J.A. Sazio: ORCID iD

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Date deposited: 23 Jul 2007
Last modified: 17 Jul 2017 15:06

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Author: C.E. Finlayson
Author: A. Amezcua-Correa
Author: P.J.A. Sazio ORCID iD
Author: N.F. Baril
Author: J.V. Badding

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