Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers


Finlayson, C.E., Amezcua-Correa, A., Sazio, P.J.A., Baril, N.F. and Badding, J.V. (2007) Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers Applied Physics Letters, 90, (132110), pp. 1-3. (doi:10.1063/1.2713755).

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Description/Abstract

Extreme aspect ratio tubes and wires of polycrystalline silicon and germanium have been deposited within silica microstructured optical fibers using high-pressure precursors, demonstrating the potential of a platform technology for the development of in-fiber optoelectronics. Microstructural studies of the deposited material using Raman spectroscopy show effects due to strain between core and cladding and the presence of amorphous and polycrystalline phases for silicon. Germanium, in contrast, is more crystalline and less strained. This in-fiber device geometry is utilized for two- and three-terminal electrical characterization of the key parameters of resistivity and carrier type, mobility and concentration

Item Type: Article
Digital Object Identifier (DOI): doi:10.1063/1.2713755
ISSNs: 0003-6951 (print)
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ePrint ID: 46894
Date :
Date Event
March 2007Published
Date Deposited: 23 Jul 2007
Last Modified: 16 Apr 2017 18:32
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/46894

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