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Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment

Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment
Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment
In this work, a Cu/ZnO/ITO resistive random access memory (RRAM) structure in which ZnO films are irradiated with neutral oxygen beams was employed to investigate the effect of neutral oxygen beams as a surface treatment. It was confirmed that the treatment reduced the defect concentration in the sputtered-ZnO film and improved the resistance change characteristics of the device. These results indicate the great potential of neutral oxygen beams in the development of RRAM devices using ZnO films.
ReRAM, ZnO, material, memristor, plasma, transparent, treatment
0021-4922
Simanjuntak, Firman
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Ohno, Takeo
09a9b78e-5127-4c98-a7b9-1ce850bed3cd
Minami, Kana
3a12932f-0d8e-4b51-8442-9f17269994be
Samukawa, Seiji
27625089-b677-4289-95c2-07102eee6990
Simanjuntak, Firman
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Ohno, Takeo
09a9b78e-5127-4c98-a7b9-1ce850bed3cd
Minami, Kana
3a12932f-0d8e-4b51-8442-9f17269994be
Samukawa, Seiji
27625089-b677-4289-95c2-07102eee6990

Simanjuntak, Firman, Ohno, Takeo, Minami, Kana and Samukawa, Seiji (2022) Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment. Japanese Journal of Applied Physics, 61 (SM), [SM1010]. (doi:10.35848/1347-4065/ac762e).

Record type: Article

Abstract

In this work, a Cu/ZnO/ITO resistive random access memory (RRAM) structure in which ZnO films are irradiated with neutral oxygen beams was employed to investigate the effect of neutral oxygen beams as a surface treatment. It was confirmed that the treatment reduced the defect concentration in the sputtered-ZnO film and improved the resistance change characteristics of the device. These results indicate the great potential of neutral oxygen beams in the development of RRAM devices using ZnO films.

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JJAP-S1102770.R1_Proof_hi - Accepted Manuscript
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Accepted/In Press date: 5 June 2022
Published date: 1 July 2022
Additional Information: Publisher Copyright: © 2022 The Japan Society of Applied Physics.
Keywords: ReRAM, ZnO, material, memristor, plasma, transparent, treatment
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Identifiers

Local EPrints ID: 469206
URI: http://eprints.soton.ac.uk/id/eprint/469206
DOI: doi:10.35848/1347-4065/ac762e
ISSN: 0021-4922
PURE UUID: f7471f67-5ead-415e-b584-686a1d6df46e
ORCID for Firman Simanjuntak: ORCID iD orcid.org/0000-0002-9508-5849

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Date deposited: 09 Sep 2022 16:37
Last modified: 06 Jun 2024 04:10

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Contributors

Author: Firman Simanjuntak ORCID iD
Author: Takeo Ohno
Author: Kana Minami
Author: Seiji Samukawa

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