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Facilitating uniform large-scale MoS2, WS2 monolayers and their heterostructures through van der Waals Epitaxy

Facilitating uniform large-scale MoS2, WS2 monolayers and their heterostructures through van der Waals Epitaxy
Facilitating uniform large-scale MoS2, WS2 monolayers and their heterostructures through van der Waals Epitaxy
The fabrication process for the uniform large-scale MoS2, WS2 transition metal
dichalcogenides (TMDCs) monolayers and their heterostructures has been developed by Van der Waals epitaxy (VdWE) through the reaction of MoCl5 or WCl6 precursors and the reactive gas H2S to form MoS2 or WS2 monolayers, respectively. The heterostructures of MoS2/WS2 or WS2/MoS2 can be easily achieved by changing the precursor from WCl6 to MoCl5 once the WS2 monolayer has been fabricated or switching the precursor from MoCl5 to WCl6 after the MoS2 monolayer has been deposited on the substrate.
These VdWE-grown MoS2, WS2 monolayers and their heterostructures have been successfully deposited on Si wafer with 300 nm SiO2 coating (300 nm SiO2/Si), quartz glass, fused silica and sapphire substrates using the protocol we have developed. We have characterized these TMDCs materials with a range of tools/techniques including scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), micro-Raman, photoluminescence (PL), atomic force microscopy (AFM), transmission electron microscope (TEM), energy-dispersive X-ray spectroscopy (EDX) and selected area electron diffraction (SAED). The band alignment and large-scale uniformity of MoS2/WS2 heterostructures have also been evaluated with PL spectroscopy.
This process and resulting large-scale MoS2, WS2 monolayers and their heterostructures have demonstrated promising solutions for the applications in next generation nanoelectronics, nanophotonics and quantum technology.
MoS2, WS2, heterostructures, nanoelectronics, nanophotonics, transition-metal dichalcogenides, van der Waals epitaxy, MoS, WS
1944-8244
42365 - 42373
Huang, Kevin Chung-Che
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Wang, He
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Cao, Yameng
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Weatherby, Edwin
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Richheimer, Filipe
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Wood, Sebastian
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Jiang, Shan
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Wei, Daqing
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Dong, Yongkang
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Lu, Xiaosong
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Wang, Pengfei
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Polcar, Tomas
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Hewak, Daniel W.
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Huang, Kevin Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Wang, He
0bb8fa1d-de57-42f1-935c-369731be4407
Cao, Yameng
ace999c1-8c45-4b7e-bcef-e99aebef69ab
Weatherby, Edwin
90e34e23-3a6e-432f-8003-6510efbe1d02
Richheimer, Filipe
1d9c3ca4-9c4e-4417-a975-05f8fa5478c5
Wood, Sebastian
d9b2d9b7-f4a1-4b57-9a9b-e2b5c95c3e80
Jiang, Shan
57f77f34-adbc-461f-927c-8dc6f728167b
Wei, Daqing
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Dong, Yongkang
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Lu, Xiaosong
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Wang, Pengfei
a1ba240f-d4f0-4150-bcd8-cb418e841dcb
Polcar, Tomas
c669b663-3ba9-4e7b-9f97-8ef5655ac6d2
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0

Huang, Kevin Chung-Che, Wang, He, Cao, Yameng, Weatherby, Edwin, Richheimer, Filipe, Wood, Sebastian, Jiang, Shan, Wei, Daqing, Dong, Yongkang, Lu, Xiaosong, Wang, Pengfei, Polcar, Tomas and Hewak, Daniel W. (2022) Facilitating uniform large-scale MoS2, WS2 monolayers and their heterostructures through van der Waals Epitaxy. ACS Applied Materials and Interfaces, 14 (37), 42365 - 42373. (doi:10.1021/acsami.2c12174).

Record type: Article

Abstract

The fabrication process for the uniform large-scale MoS2, WS2 transition metal
dichalcogenides (TMDCs) monolayers and their heterostructures has been developed by Van der Waals epitaxy (VdWE) through the reaction of MoCl5 or WCl6 precursors and the reactive gas H2S to form MoS2 or WS2 monolayers, respectively. The heterostructures of MoS2/WS2 or WS2/MoS2 can be easily achieved by changing the precursor from WCl6 to MoCl5 once the WS2 monolayer has been fabricated or switching the precursor from MoCl5 to WCl6 after the MoS2 monolayer has been deposited on the substrate.
These VdWE-grown MoS2, WS2 monolayers and their heterostructures have been successfully deposited on Si wafer with 300 nm SiO2 coating (300 nm SiO2/Si), quartz glass, fused silica and sapphire substrates using the protocol we have developed. We have characterized these TMDCs materials with a range of tools/techniques including scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), micro-Raman, photoluminescence (PL), atomic force microscopy (AFM), transmission electron microscope (TEM), energy-dispersive X-ray spectroscopy (EDX) and selected area electron diffraction (SAED). The band alignment and large-scale uniformity of MoS2/WS2 heterostructures have also been evaluated with PL spectroscopy.
This process and resulting large-scale MoS2, WS2 monolayers and their heterostructures have demonstrated promising solutions for the applications in next generation nanoelectronics, nanophotonics and quantum technology.

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VdWE TMDCs_ACS AMI_accepted manuscript - Accepted Manuscript
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Accepted/In Press date: 1 September 2022
Published date: 9 September 2022
Additional Information: Funding Information: The authors would like to acknowledge Dr. Yohann Franz for Raman measurement with 473 nm laser at Diamond Light Source and the technical assistance of Mr. Chris Craig. The 2D materials work is funded by the Engineering Physical Sciences Research Council through the Chalcogenide Photonic Technologies (No. EPSRC EP/M008487/1) and the Future Photonics Manufacturing Hub (No. EPSRC EP/N00762X/1) at the University of Southampton, United Kingdom. This work received funding from the UK Government’s Department for Business, Energy and Industrial Strategy (BEIS) through the UK’s National Measurement System programmes at the National Physical Laboratory, United Kingdom. Publisher Copyright: © 2022 The Authors. Published by American Chemical Society.
Keywords: MoS2, WS2, heterostructures, nanoelectronics, nanophotonics, transition-metal dichalcogenides, van der Waals epitaxy, MoS, WS

Identifiers

Local EPrints ID: 469902
URI: http://eprints.soton.ac.uk/id/eprint/469902
ISSN: 1944-8244
PURE UUID: 8a094325-c7b9-4403-91e8-55ac7065c116
ORCID for Kevin Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Tomas Polcar: ORCID iD orcid.org/0000-0002-0863-6287
ORCID for Daniel W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 28 Sep 2022 16:44
Last modified: 17 Mar 2024 07:29

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Contributors

Author: He Wang
Author: Yameng Cao
Author: Edwin Weatherby
Author: Filipe Richheimer
Author: Sebastian Wood
Author: Shan Jiang
Author: Daqing Wei
Author: Yongkang Dong
Author: Xiaosong Lu
Author: Pengfei Wang
Author: Tomas Polcar ORCID iD
Author: Daniel W. Hewak ORCID iD

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