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A thermally erasable silicon oxide layer for molecular beam epitaxy

A thermally erasable silicon oxide layer for molecular beam epitaxy
A thermally erasable silicon oxide layer for molecular beam epitaxy
We present a systematic study of the oxidation and deoxidation behaviours of several kinds of ultrathin silicon oxide layers frequently used in silicon (Si) technology, which in this work serve as surface protecting layers for molecular beam epitaxy (MBE). With various characterization techniques, we demonstrate that a chemically grown silicon oxide layer is the most promising candidate for subsequent removal in an ultra-high vacuum chamber at a temperature of 1000 C, without making use of a reducing agent. As a demonstration, a tensile-strained Ge(100) layer is epitaxially grown on the deoxidised wafer with an atomically flat surface and a low threading dislocation density of 3.33 × 108 cm−2 . Our findings reveal that the ultra-thin oxide layer grown using a chemical approach is able to protect Si surfaces for subsequent MBE growth of Ge. This approach is promising for the growth of III/V-on-Si (using Ge as a buffer) and all group-IV related epitaxy for integration on the Si photonics platforms.
Ge, MBE oxidation, Si, deoxidation
0022-3727
Hou, Yaonan
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Jia, Hui
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Tang, Mingchu
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Mosberg, Aleksander Buseth
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Ramasse, Quentin M
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Skandalos, Ilias
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Noori, Yasir
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Yang, Junjie
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Liu, Huiyun
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Seeds, Alwyn
b2a19d24-64a5-4572-8992-b211a240a185
Gardes, Frederic
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Hou, Yaonan
21cd6d93-63f2-4c1d-8297-6cce6bc7a772
Jia, Hui
457a418b-49f9-4902-9bed-1cb83e61848b
Tang, Mingchu
a9b38203-265f-458f-9205-9a94deffa997
Mosberg, Aleksander Buseth
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Ramasse, Quentin M
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Skandalos, Ilias
3daa2bbe-f6ee-4b6e-ac57-46df0c21c732
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
Yang, Junjie
413c9237-8f30-4be3-99f4-6be8b847767a
Liu, Huiyun
ed01636f-0728-4d76-87ee-08b93635b2aa
Seeds, Alwyn
b2a19d24-64a5-4572-8992-b211a240a185
Gardes, Frederic
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Hou, Yaonan, Jia, Hui, Tang, Mingchu, Mosberg, Aleksander Buseth, Ramasse, Quentin M, Skandalos, Ilias, Noori, Yasir, Yang, Junjie, Liu, Huiyun, Seeds, Alwyn and Gardes, Frederic (2022) A thermally erasable silicon oxide layer for molecular beam epitaxy. Journal of Physics D: Applied Physics, 55 (42), [424004]. (doi:10.1088/1361-6463/ac8600).

Record type: Article

Abstract

We present a systematic study of the oxidation and deoxidation behaviours of several kinds of ultrathin silicon oxide layers frequently used in silicon (Si) technology, which in this work serve as surface protecting layers for molecular beam epitaxy (MBE). With various characterization techniques, we demonstrate that a chemically grown silicon oxide layer is the most promising candidate for subsequent removal in an ultra-high vacuum chamber at a temperature of 1000 C, without making use of a reducing agent. As a demonstration, a tensile-strained Ge(100) layer is epitaxially grown on the deoxidised wafer with an atomically flat surface and a low threading dislocation density of 3.33 × 108 cm−2 . Our findings reveal that the ultra-thin oxide layer grown using a chemical approach is able to protect Si surfaces for subsequent MBE growth of Ge. This approach is promising for the growth of III/V-on-Si (using Ge as a buffer) and all group-IV related epitaxy for integration on the Si photonics platforms.

Text
Hou_2022_J._Phys._D__Appl._Phys._55_424004 - Version of Record
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Accepted/In Press date: 2 August 2022
e-pub ahead of print date: 19 August 2022
Published date: 20 October 2022
Additional Information: The authors are grateful for support from the UKRI-EPSRC Programme Grant 'QUantum Dot On Silicon systems for communications, information processing and sensing (QUDOS)'. Electron microscopy experiments were carried out at SuperSTEM, the National Research Facility for Advanced Electron Microscopy, also supported by UKRI-EPSRC. For the purpose of open access, the author has applied a Creative Commons Attribution* (CCBY) licence to any Author Accepted Manuscript version arising.
Keywords: Ge, MBE oxidation, Si, deoxidation

Identifiers

Local EPrints ID: 469989
URI: http://eprints.soton.ac.uk/id/eprint/469989
ISSN: 0022-3727
PURE UUID: 322a4495-b33f-4435-b1d8-b3bd8cf295e7
ORCID for Yasir Noori: ORCID iD orcid.org/0000-0001-5285-8779
ORCID for Frederic Gardes: ORCID iD orcid.org/0000-0003-1400-3272

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Date deposited: 29 Sep 2022 16:48
Last modified: 30 Oct 2023 03:17

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Contributors

Author: Yaonan Hou
Author: Hui Jia
Author: Mingchu Tang
Author: Aleksander Buseth Mosberg
Author: Quentin M Ramasse
Author: Ilias Skandalos
Author: Yasir Noori ORCID iD
Author: Junjie Yang
Author: Huiyun Liu
Author: Alwyn Seeds
Author: Frederic Gardes ORCID iD

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