(INVITED) Opto-electronic properties of solution-synthesized MoS2 metal-semiconductor-metal photodetector
(INVITED) Opto-electronic properties of solution-synthesized MoS2 metal-semiconductor-metal photodetector
We report a simple fabrication method for metal-semiconductor-metal (MSM) photodetectors using solution-synthesized MoS2 films as the semiconductor channel and pure indium for the metal contacts. Resonance Raman spectroscopy has been used to confirm the growth of ultra-thin MoS2 films. Due to the low work function of indium, the back-to-back indium-MoS2 Schottky junctions formed relatively low Schottky barrier height (0.43 eV), which has been calculated using the thermionic field emission model. Moreover, the MSM device shows good responsivity (22 mA/W) under white light illumination. The MoS2-MSM device possesses higher photoelectrical response in the visible and near IR region compared to UV due to the indirect bandgap of ultra-thin MoS2 film which has been estimated to be 1.38 eV. These findings reveal the significance of using low work function metals like indium as contacts for layered transition metal dichalcogenides (TMDC) films (produced by low cost solution-based techniques), particularly MoS2, in order to design semiconductor devices with efficient opto-electronic performance.
MSM photodetector, MoS, schottky contacts
A. Abbas, Omar
729833ab-6c75-4208-a5ce-5f13df330510
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Mailis, Sakellaris
9fcc2cc8-9c00-452e-b785-a20263cfb33b
Sazio, Pier-John
0d6200b5-9947-469a-8e97-9147da8a7158
24 January 2022
A. Abbas, Omar
729833ab-6c75-4208-a5ce-5f13df330510
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Mailis, Sakellaris
9fcc2cc8-9c00-452e-b785-a20263cfb33b
Sazio, Pier-John
0d6200b5-9947-469a-8e97-9147da8a7158
A. Abbas, Omar, Huang, Chung-Che, Hewak, Daniel W., Mailis, Sakellaris and Sazio, Pier-John
(2022)
(INVITED) Opto-electronic properties of solution-synthesized MoS2 metal-semiconductor-metal photodetector.
Optical Materials: X, 13, [100135].
(doi:10.1016/j.omx.2022.100135).
Abstract
We report a simple fabrication method for metal-semiconductor-metal (MSM) photodetectors using solution-synthesized MoS2 films as the semiconductor channel and pure indium for the metal contacts. Resonance Raman spectroscopy has been used to confirm the growth of ultra-thin MoS2 films. Due to the low work function of indium, the back-to-back indium-MoS2 Schottky junctions formed relatively low Schottky barrier height (0.43 eV), which has been calculated using the thermionic field emission model. Moreover, the MSM device shows good responsivity (22 mA/W) under white light illumination. The MoS2-MSM device possesses higher photoelectrical response in the visible and near IR region compared to UV due to the indirect bandgap of ultra-thin MoS2 film which has been estimated to be 1.38 eV. These findings reveal the significance of using low work function metals like indium as contacts for layered transition metal dichalcogenides (TMDC) films (produced by low cost solution-based techniques), particularly MoS2, in order to design semiconductor devices with efficient opto-electronic performance.
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Accepted/In Press date: 3 January 2022
e-pub ahead of print date: 12 January 2022
Published date: 24 January 2022
Additional Information:
Funding Information:
The first author gratefully acknowledges the financial support from The Higher Committee for Education Development in Iraq (HCED Iraq). The authors acknowledge financial support from the UK's Engineering and Physical Sciences Research Council ( EPSRC ) through National Hub in High Value Photonic Manufacturing (grant No. EP/N00762X/1 ) and Russian Science Foundation (RSF) (grant No. 21-79-20208 ). We also thank Dr. Adam H. Lewis for performing Raman spectroscopy.
Keywords:
MSM photodetector, MoS, schottky contacts
Identifiers
Local EPrints ID: 470506
URI: http://eprints.soton.ac.uk/id/eprint/470506
PURE UUID: dfdf9ef0-30ff-42b0-919f-bf3c5d221c70
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Date deposited: 12 Oct 2022 16:31
Last modified: 17 Mar 2024 03:03
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Author:
Omar A. Abbas
Author:
Chung-Che Huang
Author:
Sakellaris Mailis
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