Integrated zinc oxide inverters with optimised Al-doped zinc oxide contacts
Integrated zinc oxide inverters with optimised Al-doped zinc oxide contacts
Poor source-drain contacts could degrade a metal-oxide channel thin-film transistor’s (TFT) on/off current ratio, reduce the effective mobility and affect integrated circuit operation. To mitigate this issue, conductive oxides such as Al-doped ZnO (AZO) have been used as ohmic contacts [1]. However, there is little work done on the impact of varying Al/Zn doping ratios in AZO on the electrical performance of TFT circuits. Therefore, in this work, we investigate the Al/Zn doping ratio for a ZnO TFT source-drain with low sub-threshold slope, high mobility, and high on/off ratio suitable for circuit applications such as a resistive-load inverter,
Rowlinson, Ben, Daniel
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Zeng, Jiale
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Mallari, Arvin Cedric
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Akrofi, Joshua, Daniel
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Ebert, Martin
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Boodhoo, Liam
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Chong, Harold
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Rowlinson, Ben, Daniel
05db0f48-f15f-4d54-93eb-1e310348bc9a
Zeng, Jiale
a76aaa33-5b24-4590-849d-12d8fdd44618
Mallari, Arvin Cedric
4fb67222-9205-472b-aa3d-96eaa7a33115
Akrofi, Joshua, Daniel
5022b800-8f9b-4737-85cf-1690b9b1bd61
Ebert, Martin
1a8f1756-d724-4b44-8504-c01f8dc7aa50
Boodhoo, Liam
4b4e0c7b-bc90-4e49-8e99-36b646bc12c2
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Rowlinson, Ben, Daniel, Zeng, Jiale, Mallari, Arvin Cedric, Akrofi, Joshua, Daniel, Ebert, Martin, Boodhoo, Liam and Chong, Harold
(2022)
Integrated zinc oxide inverters with optimised Al-doped zinc oxide contacts.
48th Internaltional Conference on Micro and Nano Engineering - EuroSensor, , Leuven, Belgium.
19 - 23 Sep 2022.
(In Press)
Record type:
Conference or Workshop Item
(Other)
Abstract
Poor source-drain contacts could degrade a metal-oxide channel thin-film transistor’s (TFT) on/off current ratio, reduce the effective mobility and affect integrated circuit operation. To mitigate this issue, conductive oxides such as Al-doped ZnO (AZO) have been used as ohmic contacts [1]. However, there is little work done on the impact of varying Al/Zn doping ratios in AZO on the electrical performance of TFT circuits. Therefore, in this work, we investigate the Al/Zn doping ratio for a ZnO TFT source-drain with low sub-threshold slope, high mobility, and high on/off ratio suitable for circuit applications such as a resistive-load inverter,
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Accepted/In Press date: 8 June 2022
Venue - Dates:
48th Internaltional Conference on Micro and Nano Engineering - EuroSensor, , Leuven, Belgium, 2022-09-19 - 2022-09-23
Identifiers
Local EPrints ID: 470524
URI: http://eprints.soton.ac.uk/id/eprint/470524
PURE UUID: 6dc2745c-81da-4925-a77c-f37dbe402977
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Date deposited: 22 Jan 2025 17:44
Last modified: 10 Jun 2025 02:06
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Contributors
Author:
Ben, Daniel Rowlinson
Author:
Jiale Zeng
Author:
Arvin Cedric Mallari
Author:
Joshua, Daniel Akrofi
Author:
Martin Ebert
Author:
Liam Boodhoo
Author:
Harold Chong
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