Tunable index silicon nitride for CMOS photonics applications
Tunable index silicon nitride for CMOS photonics applications
We are demonstrating the use of Low temperature PECVD silicon nitride based materials used for applications ranging from non-linear functionalities in the C band, wavelength division multiplexing in the O band and post fabrication light based refractive index tuning for in-situ device trimming. These materials are demonstrated for waveguide ranging from 300 nm up to 1 micron in thickness with refractive indices varying between 1.9 and 2.55.
Gardes, Frederic Y.
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Domínguez Bucio, Thalía
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Mastronardi, Lorenzo
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De Paoli, Greta
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Jantzen, Senta L.
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Skandalos, Ilias
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Milošević, Milan M.
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Vitali, Valerio
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Faneca, Joaquin
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Petropoulos, Periklis
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Jurado Romero, Francisco
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Luque-González, José Manuel
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Molina-Fernández, Íñigo
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Halir, Robert
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Ortega-Moñux, Alejandro
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Wangüemert-Pérez, J. G.
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Melati, Daniele
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Schmid, Jens H.
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Cheben, Pavel
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Gardes, Frederic Y.
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Domínguez Bucio, Thalía
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Mastronardi, Lorenzo
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De Paoli, Greta
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Jantzen, Senta L.
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Skandalos, Ilias
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Milošević, Milan M.
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Vitali, Valerio
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Faneca, Joaquin
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Petropoulos, Periklis
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Jurado Romero, Francisco
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Luque-González, José Manuel
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Molina-Fernández, Íñigo
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Halir, Robert
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Ortega-Moñux, Alejandro
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Wangüemert-Pérez, J. G.
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Melati, Daniele
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Schmid, Jens H.
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Cheben, Pavel
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Gardes, Frederic Y., Domínguez Bucio, Thalía, Mastronardi, Lorenzo, De Paoli, Greta, Jantzen, Senta L., Skandalos, Ilias, Milošević, Milan M., Vitali, Valerio, Faneca, Joaquin, Petropoulos, Periklis, Jurado Romero, Francisco, Luque-González, José Manuel, Molina-Fernández, Íñigo, Halir, Robert, Ortega-Moñux, Alejandro, Wangüemert-Pérez, J. G., Melati, Daniele, Schmid, Jens H. and Cheben, Pavel
(2021)
Tunable index silicon nitride for CMOS photonics applications.
García-Blanco, Sonia M. and Cheben, Pavel
(eds.)
In Integrated Optics: Devices, Materials, and Technologies XXV.
vol. 11689,
SPIE..
(doi:10.1117/12.2578387).
Record type:
Conference or Workshop Item
(Paper)
Abstract
We are demonstrating the use of Low temperature PECVD silicon nitride based materials used for applications ranging from non-linear functionalities in the C band, wavelength division multiplexing in the O band and post fabrication light based refractive index tuning for in-situ device trimming. These materials are demonstrated for waveguide ranging from 300 nm up to 1 micron in thickness with refractive indices varying between 1.9 and 2.55.
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e-pub ahead of print date: 5 March 2021
Identifiers
Local EPrints ID: 470672
URI: http://eprints.soton.ac.uk/id/eprint/470672
ISSN: 1996-756X
PURE UUID: 673612a3-4511-453d-bc41-c6a205f43ab4
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Date deposited: 17 Oct 2022 16:59
Last modified: 09 Oct 2024 02:12
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Contributors
Author:
Frederic Y. Gardes
Author:
Thalía Domínguez Bucio
Author:
Lorenzo Mastronardi
Author:
Greta De Paoli
Author:
Senta L. Jantzen
Author:
Ilias Skandalos
Author:
Milan M. Milošević
Author:
Valerio Vitali
Author:
Joaquin Faneca
Author:
Periklis Petropoulos
Author:
Francisco Jurado Romero
Author:
José Manuel Luque-González
Author:
Íñigo Molina-Fernández
Author:
Robert Halir
Author:
Alejandro Ortega-Moñux
Author:
J. G. Wangüemert-Pérez
Author:
Daniele Melati
Author:
Jens H. Schmid
Author:
Pavel Cheben
Editor:
Sonia M. García-Blanco
Editor:
Pavel Cheben
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