Anodic Sb2S3 electrodeposition from a single source precursor for resistive random-access memory devices
Anodic Sb2S3 electrodeposition from a single source precursor for resistive random-access memory devices
In this paper we report the use of Na3[SbS4].9H2O as a single source precursor for the electrodeposition of Sb2S3 from aqueous electrolyte at pH 9.1. We present the electrochemistry of the [SbS4]3− anion and the redox processes observed for the deposited Sb2S3 film. We show that an amorphous Sb2S3 film can be deposited by anodic electrodeposition onto glassy carbon and that the by-product that accompanies this deposition can be avoided by using a suitable pulse plating approach. Raman spectroscopy and grazing incidence X-ray diffraction were used to characterise the deposits and to show that good quality crystalline films of Sb2S3 are produced on annealing. The crystalline Sb2S3 films were screened for application in Resistive Random-Access Memory, and it was demonstrated that crystalline Sb2S3 films display typical bipolar resistive switching behaviour, and that the resistance ratio between the high resistance state and the low resistance state is approximately one order of magnitude at 1.5 V, which is sufficient for memory applications. A mechanism for the resistive switching is also proposed.
Antimony sulfide, Electrodeposition, Resistive random-access memory, Single source electrodeposition precursor
Wallace, A.G.
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King, R.P.
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Zhelev, N.
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Jaafar, A.H.
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Levason, W.
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Huang, R.
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Reid, G.
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Bartlett, P.N.
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10 November 2022
Wallace, A.G.
5e6eb793-6c4e-467b-bc09-f6f3c1c5e395
King, R.P.
2f9548b8-fc3b-447c-a5df-de5a3e513a39
Zhelev, N.
76a8a0dd-0c24-4483-a217-b17ee26bd79b
Jaafar, A.H.
ca3d9e21-e81e-491e-8a8a-b7b8f6e9fc84
Levason, W.
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Huang, R.
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Reid, G.
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Bartlett, P.N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Wallace, A.G., King, R.P., Zhelev, N., Jaafar, A.H., Levason, W., Huang, R., Reid, G. and Bartlett, P.N.
(2022)
Anodic Sb2S3 electrodeposition from a single source precursor for resistive random-access memory devices.
Electrochimica Acta, 432, [141162].
(doi:10.1016/j.electacta.2022.141162).
Abstract
In this paper we report the use of Na3[SbS4].9H2O as a single source precursor for the electrodeposition of Sb2S3 from aqueous electrolyte at pH 9.1. We present the electrochemistry of the [SbS4]3− anion and the redox processes observed for the deposited Sb2S3 film. We show that an amorphous Sb2S3 film can be deposited by anodic electrodeposition onto glassy carbon and that the by-product that accompanies this deposition can be avoided by using a suitable pulse plating approach. Raman spectroscopy and grazing incidence X-ray diffraction were used to characterise the deposits and to show that good quality crystalline films of Sb2S3 are produced on annealing. The crystalline Sb2S3 films were screened for application in Resistive Random-Access Memory, and it was demonstrated that crystalline Sb2S3 films display typical bipolar resistive switching behaviour, and that the resistance ratio between the high resistance state and the low resistance state is approximately one order of magnitude at 1.5 V, which is sufficient for memory applications. A mechanism for the resistive switching is also proposed.
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Accepted/In Press date: 7 September 2022
Published date: 10 November 2022
Additional Information:
Funding Information:
This work was supported by EPSRC Grants EP/N035437/1 and EP/K009877/1 .
Publisher Copyright:
© 2022
Keywords:
Antimony sulfide, Electrodeposition, Resistive random-access memory, Single source electrodeposition precursor
Identifiers
Local EPrints ID: 471465
URI: http://eprints.soton.ac.uk/id/eprint/471465
ISSN: 0013-4686
PURE UUID: 2652c734-2793-4064-8c55-05b0b272758a
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Date deposited: 08 Nov 2022 18:54
Last modified: 06 Jun 2024 01:50
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Contributors
Author:
A.G. Wallace
Author:
R.P. King
Author:
A.H. Jaafar
Author:
R. Huang
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