Anodic Sb₂S₃ electrodeposition from a single source precursor for resistive random-access memory devices

Abstract

In this paper we report the use of Na₃[SbS₄].9H₂O as a single source precursor for the electrodeposition of Sb₂S₃ from aqueous electrolyte at pH 9.1. We present the electrochemistry of the [SbS₄]³⁻ anion and the redox processes observed for the deposited Sb₂S₃ film. We show that an amorphous Sb₂S₃ film can be deposited by anodic electrodeposition onto glassy carbon and that the by-product that accompanies this deposition can be avoided by using a suitable pulse plating approach. Raman spectroscopy and grazing incidence X-ray diffraction were used to characterise the deposits and to show that good quality crystalline films of Sb₂S₃ are produced on annealing. The crystalline Sb₂S₃ films were screened for application in Resistive Random-Access Memory, and it was demonstrated that crystalline Sb₂S₃ films display typical bipolar resistive switching behaviour, and that the resistance ratio between the high resistance state and the low resistance state is approximately one order of magnitude at 1.5 V, which is sufficient for memory applications. A mechanism for the resistive switching is also proposed.

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