Thermo-optic tuning of silicon nitride microring resonators with low loss non-volatile Sb2S3 phase change material
Thermo-optic tuning of silicon nitride microring resonators with low loss non-volatile Sb2S3 phase change material
A new family of phase change material based on antimony has recently been explored for applications in near-IR tunable photonics due to its wide bandgap, manifested as broadband transparency from visible to NIR wavelengths. Here, we characterize Sb
2S
3 optically and demonstrate the integration of this phase change material in a silicon nitride platform using a microring resonator that can be thermally tuned using the amorphous and crystalline states of the phase change material, achieving extinction ratios of up to 18 dB in the C-band. We extract the thermo-optic coefficient of the amorphous and crystalline states of the Sb
2S
3 to be 3.4 x 10
- 4K
- 1 and 0.1 x 10
- 4K
- 1, respectively. Additionally, we detail the first observation of bi-directional shifting for permanent trimming of a non-volatile switch using continuous wave (CW) laser exposure (- 5.9 to 5.1 dBm) with a modulation in effective refractive index ranging from +5.23 x 10
- 5 to - 1.20 x 10
- 4. This work experimentally verifies optical phase modifications and permanent trimming of Sb
2S
3, enabling potential applications such as optically controlled memories and weights for neuromorphic architecture and high density switch matrix using a multi-layer PECVD based photonic integrated circuit.
Ring resonators, Silicon Photonics, Silicon nitride, optical tuning, phase change materials
Ilie, Stefan Tudor
9ff80b2a-1998-41dd-9eed-7b010cbbf3a9
Faneca, Joaquin
03751f71-8e60-4d95-849b-a6f03b2e4051
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Grabska, Katarzyna M.
b8a061e3-7774-4b33-be83-74e1a0aec31a
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
24 October 2022
Ilie, Stefan Tudor
9ff80b2a-1998-41dd-9eed-7b010cbbf3a9
Faneca, Joaquin
03751f71-8e60-4d95-849b-a6f03b2e4051
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Grabska, Katarzyna M.
b8a061e3-7774-4b33-be83-74e1a0aec31a
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Ilie, Stefan Tudor, Faneca, Joaquin, Zeimpekis, Ioannis, Domínguez Bucio, Thalía, Grabska, Katarzyna M., Hewak, Daniel W., Chong, Harold and Gardes, Frederic
(2022)
Thermo-optic tuning of silicon nitride microring resonators with low loss non-volatile Sb2S3 phase change material.
Scientific Reports, 12 (1), [17815].
(doi:10.1038/s41598-022-21590-w).
Abstract
A new family of phase change material based on antimony has recently been explored for applications in near-IR tunable photonics due to its wide bandgap, manifested as broadband transparency from visible to NIR wavelengths. Here, we characterize Sb
2S
3 optically and demonstrate the integration of this phase change material in a silicon nitride platform using a microring resonator that can be thermally tuned using the amorphous and crystalline states of the phase change material, achieving extinction ratios of up to 18 dB in the C-band. We extract the thermo-optic coefficient of the amorphous and crystalline states of the Sb
2S
3 to be 3.4 x 10
- 4K
- 1 and 0.1 x 10
- 4K
- 1, respectively. Additionally, we detail the first observation of bi-directional shifting for permanent trimming of a non-volatile switch using continuous wave (CW) laser exposure (- 5.9 to 5.1 dBm) with a modulation in effective refractive index ranging from +5.23 x 10
- 5 to - 1.20 x 10
- 4. This work experimentally verifies optical phase modifications and permanent trimming of Sb
2S
3, enabling potential applications such as optically controlled memories and weights for neuromorphic architecture and high density switch matrix using a multi-layer PECVD based photonic integrated circuit.
Text
s41598-022-21590-w
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More information
Accepted/In Press date: 29 September 2022
Published date: 24 October 2022
Additional Information:
Funding Information:
The authors acknowledge the financial support from Engineering and Physical Sciences Research Council (EPSRC) - (EP/M015130/1, EP/R003076/1, EP/R513325/1, EP/N013247/1); H2020 ICT-PLASMONIAC; Agencia Estatal de Investigación and NextGenerationEU/PRTR (FJC2020-042823-I). Stefan-Tudor Ilie would like to thank ORC (Optoelectronics Research Center) for the support in pursing postgraduate studies. The fabrication was carried out at the Southampton Nanofabrication Centre, University of Southampton, UK.
Publisher Copyright:
© 2022, The Author(s).
Keywords:
Ring resonators, Silicon Photonics, Silicon nitride, optical tuning, phase change materials
Identifiers
Local EPrints ID: 471773
URI: http://eprints.soton.ac.uk/id/eprint/471773
ISSN: 2045-2322
PURE UUID: a70d7c65-4ef1-4bbe-9d69-0a880adae478
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Date deposited: 18 Nov 2022 17:30
Last modified: 21 Sep 2024 01:58
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Contributors
Author:
Stefan Tudor Ilie
Author:
Joaquin Faneca
Author:
Thalía Domínguez Bucio
Author:
Katarzyna M. Grabska
Author:
Harold Chong
Author:
Frederic Gardes
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