Integrated hybrid III-V/Si laser and transmitter

Duan, G. H., Jany, C., Le Liepvre, A., Lamponi, M., Accard, A., Poingt, F., Make, D., Lelarge, F., Messaoudene, S., Bordel, D., Fedeli, J. M., Keyvaninia, S., Roelkens, G., Van Thourhout, D., Thomson, D. J., Gardes, F. Y. and Reed, G. T. (2012) Integrated hybrid III-V/Si laser and transmitter. In 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012. IEEE. pp. 16-19 . (doi:10.1109/ICIPRM.2012.6403306).

Abstract

This paper reports on recent advances on integrated hybrid InP/SOI lasers and transmitters. Based on a molecular wafer bonding technique, we develop hybrid III-V/Si lasers exhibiting new features: narrow III-V waveguide width of less than 3 μm, tapered III-V and silicon waveguides for mode transfer. These new features lead to good laser performances: A lasing threshold as low as 30mA and an output power of more than 10 mW at room temperature in continuous wave operation regime from a single facet. Continuous wave lasing up to 70°C is obtained. Moreover, hybrid III-V/Si lasers, integrating two intra-cavity ring resonators, are fabricated. Such lasers achieve a thermal tuning range of 45 nm, with a side mode suppression ratio higher than 40 dB. More recently we demonstrate a tunable transmitter, integrating a hybrid III-V/Si laser fabricated by wafer bonding and a silicon Mach-Zehnder modulator. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

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Contributors

Author: F. Y. Gardes

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