Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands
Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands
The evaluation and comparison of the optical properties in the O and C bands of silicon nitride rib waveguides with integrated Ge2Sb2Te5 phase-change cells is reported. In straight rib waveguides, a high transmission contrast is observed in both bands when the Ge2Sb2Te5 cell is switched between states, being up to 2.5 dB/μm in the C-band and 6.4 dB/μm in the O-band. In the case of silicon nitride ring resonator waveguides, high quality factor resonances (Q ∼ 105) are found in both bands, leading to the provision of an ON-OFF switch characterized by an extinction ratio of 12 and 18 dB in O and C bands respectively. Finally, with the view to provide a comparison of the wavelength-dependent optical switching of the phase-change cell, a 3-dimensional finite-element method simulation is performed and a comparison of the optical-to-thermal energy conversion in both bands given.
[14 January 2021: Typographical corrections were made to Table 1.]
1778-1791
Faneca, Joaquin
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Carrillo, Santiago Garcia-Cuevas
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Gemo, Emanuele
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de Galarreta, Carlota Ruiz
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Domínguez Bucio, Thalía
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Gardes, Frederic Y.
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Bhaskaran, Harish
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Pernice, Wolfram H. P.
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Wright, C. David
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Baldycheva, Anna
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1 August 2020
Faneca, Joaquin
03751f71-8e60-4d95-849b-a6f03b2e4051
Carrillo, Santiago Garcia-Cuevas
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Gemo, Emanuele
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de Galarreta, Carlota Ruiz
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Domínguez Bucio, Thalía
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Gardes, Frederic Y.
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Bhaskaran, Harish
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Pernice, Wolfram H. P.
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Wright, C. David
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Baldycheva, Anna
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Faneca, Joaquin, Carrillo, Santiago Garcia-Cuevas, Gemo, Emanuele, de Galarreta, Carlota Ruiz, Domínguez Bucio, Thalía, Gardes, Frederic Y., Bhaskaran, Harish, Pernice, Wolfram H. P., Wright, C. David and Baldycheva, Anna
(2020)
Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands.
Optical Materials Express, 10 (8), .
(doi:10.1364/OME.397833).
Abstract
The evaluation and comparison of the optical properties in the O and C bands of silicon nitride rib waveguides with integrated Ge2Sb2Te5 phase-change cells is reported. In straight rib waveguides, a high transmission contrast is observed in both bands when the Ge2Sb2Te5 cell is switched between states, being up to 2.5 dB/μm in the C-band and 6.4 dB/μm in the O-band. In the case of silicon nitride ring resonator waveguides, high quality factor resonances (Q ∼ 105) are found in both bands, leading to the provision of an ON-OFF switch characterized by an extinction ratio of 12 and 18 dB in O and C bands respectively. Finally, with the view to provide a comparison of the wavelength-dependent optical switching of the phase-change cell, a 3-dimensional finite-element method simulation is performed and a comparison of the optical-to-thermal energy conversion in both bands given.
[14 January 2021: Typographical corrections were made to Table 1.]
Text
ome-10-8-1778
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e-pub ahead of print date: 6 July 2020
Published date: 1 August 2020
Identifiers
Local EPrints ID: 471900
URI: http://eprints.soton.ac.uk/id/eprint/471900
ISSN: 2159-3930
PURE UUID: 5d365d6f-8a09-47e1-b1b7-396ec34030a8
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Date deposited: 22 Nov 2022 17:41
Last modified: 17 Mar 2024 03:52
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Contributors
Author:
Joaquin Faneca
Author:
Santiago Garcia-Cuevas Carrillo
Author:
Emanuele Gemo
Author:
Carlota Ruiz de Galarreta
Author:
Thalía Domínguez Bucio
Author:
Frederic Y. Gardes
Author:
Harish Bhaskaran
Author:
Wolfram H. P. Pernice
Author:
C. David Wright
Author:
Anna Baldycheva
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