Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands

Abstract

The evaluation and comparison of the optical properties in the O and C bands of silicon nitride rib waveguides with integrated Ge₂Sb₂Te₅ phase-change cells is reported. In straight rib waveguides, a high transmission contrast is observed in both bands when the Ge₂Sb₂Te₅ cell is switched between states, being up to 2.5 dB/μm in the C-band and 6.4 dB/μm in the O-band. In the case of silicon nitride ring resonator waveguides, high quality factor resonances (Q ∼ 10⁵) are found in both bands, leading to the provision of an ON-OFF switch characterized by an extinction ratio of 12 and 18 dB in O and C bands respectively. Finally, with the view to provide a comparison of the wavelength-dependent optical switching of the phase-change cell, a 3-dimensional finite-element method simulation is performed and a comparison of the optical-to-thermal energy conversion in both bands given.
[14 January 2021: Typographical corrections were made to Table 1.]

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ORCID for Thalía Domínguez Bucio: orcid.org/0000-0002-3664-1403

ORCID for Frederic Y. Gardes: orcid.org/0000-0003-1400-3272

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