Flexible memristor devices using hybrid polymer/electrodeposited GeSbTe nanoscale thin films
Flexible memristor devices using hybrid polymer/electrodeposited GeSbTe nanoscale thin films
We report on the development of hybrid organic−inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe chalcogenide nanoscale thin films sandwiched between Ag top and TiN bottom electrodes on both Si and flexible polyimide substrates. These hybrid memristors require no electroforming process and exhibit reliable and reproducible bipolar resistive switching at low switching voltages under both
flat and bending conditions. Multistate switching behavior can also be achieved by controlling the compliance current (CC). We attribute the switching between the high resistance state (HRS) and low resistance state (LRS) in the devices to the formation and rupture of conductive Ag filaments within the hybrid PMMA/GeSbTe matrix. This work provides a promising route to fabricate flexible memory devices through an electrodeposition process for application in flexible electronics.
Flexible, electrodeposition, hybrid material, multilevel states, resistive switching
17711 - 17720
Hamdiyah, Ayoub Hassan Jaafar
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Meng, Lingcong
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Zhang, Tongjun
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Guo, Dongkai
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Newbrook, Daniel
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Zhang, Wenjian
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Reid, Gillian
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De Groot, Kees
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Bartlett, Philip N.
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Huang, Ruomeng
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23 December 2022
Hamdiyah, Ayoub Hassan Jaafar
ca3d9e21-e81e-491e-8a8a-b7b8f6e9fc84
Meng, Lingcong
8de7a0cb-c6aa-4dfd-94f5-bcdae5105a56
Zhang, Tongjun
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Guo, Dongkai
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Newbrook, Daniel
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Zhang, Wenjian
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Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Huang, Ruomeng
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Hamdiyah, Ayoub Hassan Jaafar, Meng, Lingcong, Zhang, Tongjun, Guo, Dongkai, Newbrook, Daniel, Zhang, Wenjian, Reid, Gillian, De Groot, Kees, Bartlett, Philip N. and Huang, Ruomeng
(2022)
Flexible memristor devices using hybrid polymer/electrodeposited GeSbTe nanoscale thin films.
ACS Applied Nano Materials, 5 (12), .
(doi:10.1021/acsanm.2c03639).
Abstract
We report on the development of hybrid organic−inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe chalcogenide nanoscale thin films sandwiched between Ag top and TiN bottom electrodes on both Si and flexible polyimide substrates. These hybrid memristors require no electroforming process and exhibit reliable and reproducible bipolar resistive switching at low switching voltages under both
flat and bending conditions. Multistate switching behavior can also be achieved by controlling the compliance current (CC). We attribute the switching between the high resistance state (HRS) and low resistance state (LRS) in the devices to the formation and rupture of conductive Ag filaments within the hybrid PMMA/GeSbTe matrix. This work provides a promising route to fabricate flexible memory devices through an electrodeposition process for application in flexible electronics.
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Final Revised Manuscript
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acsanm.2c03639
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Published date: 23 December 2022
Additional Information:
Funding Information:
This work is part of the ADEPT project funded by a Programme Grant from the EPSRC (EP/N035437/1).
Publisher Copyright:
© 2022 American Chemical Society.
Keywords:
Flexible, electrodeposition, hybrid material, multilevel states, resistive switching
Identifiers
Local EPrints ID: 472883
URI: http://eprints.soton.ac.uk/id/eprint/472883
PURE UUID: b58afbc6-9fdf-4711-a8f6-aa73a0ff187d
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Date deposited: 05 Jan 2023 17:33
Last modified: 12 Nov 2024 03:08
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Contributors
Author:
Ayoub Hassan Jaafar Hamdiyah
Author:
Tongjun Zhang
Author:
Dongkai Guo
Author:
Daniel Newbrook
Author:
Ruomeng Huang
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