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Flexible memristor devices using hybrid polymer/electrodeposited GeSbTe nanoscale thin films

Flexible memristor devices using hybrid polymer/electrodeposited GeSbTe nanoscale thin films
Flexible memristor devices using hybrid polymer/electrodeposited GeSbTe nanoscale thin films
We report on the development of hybrid organic−inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe chalcogenide nanoscale thin films sandwiched between Ag top and TiN bottom electrodes on both Si and flexible polyimide substrates. These hybrid memristors require no electroforming process and exhibit reliable and reproducible bipolar resistive switching at low switching voltages under both
flat and bending conditions. Multistate switching behavior can also be achieved by controlling the compliance current (CC). We attribute the switching between the high resistance state (HRS) and low resistance state (LRS) in the devices to the formation and rupture of conductive Ag filaments within the hybrid PMMA/GeSbTe matrix. This work provides a promising route to fabricate flexible memory devices through an electrodeposition process for application in flexible electronics.
Flexible, electrodeposition, hybrid material, multilevel states, resistive switching
17711 - 17720
Hamdiyah, Ayoub Hassan Jaafar
ca3d9e21-e81e-491e-8a8a-b7b8f6e9fc84
Meng, Lingcong
8de7a0cb-c6aa-4dfd-94f5-bcdae5105a56
Zhang, Tongjun
4a460cd9-f2c8-41db-8008-1cda74895b24
Guo, Dongkai
cc5dd5b1-9e1b-4a86-8f41-7161de1e2e8f
Newbrook, Daniel
8eb26553-e1e2-492d-ad78-ce51a487f31f
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Hamdiyah, Ayoub Hassan Jaafar
ca3d9e21-e81e-491e-8a8a-b7b8f6e9fc84
Meng, Lingcong
8de7a0cb-c6aa-4dfd-94f5-bcdae5105a56
Zhang, Tongjun
4a460cd9-f2c8-41db-8008-1cda74895b24
Guo, Dongkai
cc5dd5b1-9e1b-4a86-8f41-7161de1e2e8f
Newbrook, Daniel
8eb26553-e1e2-492d-ad78-ce51a487f31f
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978

Hamdiyah, Ayoub Hassan Jaafar, Meng, Lingcong, Zhang, Tongjun, Guo, Dongkai, Newbrook, Daniel, Zhang, Wenjian, Reid, Gillian, De Groot, Kees, Bartlett, Philip N. and Huang, Ruomeng (2022) Flexible memristor devices using hybrid polymer/electrodeposited GeSbTe nanoscale thin films. ACS Applied Nano Materials, 5 (12), 17711 - 17720. (doi:10.1021/acsanm.2c03639).

Record type: Article

Abstract

We report on the development of hybrid organic−inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe chalcogenide nanoscale thin films sandwiched between Ag top and TiN bottom electrodes on both Si and flexible polyimide substrates. These hybrid memristors require no electroforming process and exhibit reliable and reproducible bipolar resistive switching at low switching voltages under both
flat and bending conditions. Multistate switching behavior can also be achieved by controlling the compliance current (CC). We attribute the switching between the high resistance state (HRS) and low resistance state (LRS) in the devices to the formation and rupture of conductive Ag filaments within the hybrid PMMA/GeSbTe matrix. This work provides a promising route to fabricate flexible memory devices through an electrodeposition process for application in flexible electronics.

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Published date: 23 December 2022
Additional Information: Funding Information: This work is part of the ADEPT project funded by a Programme Grant from the EPSRC (EP/N035437/1). Publisher Copyright: © 2022 American Chemical Society.
Keywords: Flexible, electrodeposition, hybrid material, multilevel states, resistive switching

Identifiers

Local EPrints ID: 472883
URI: http://eprints.soton.ac.uk/id/eprint/472883
PURE UUID: b58afbc6-9fdf-4711-a8f6-aa73a0ff187d
ORCID for Ayoub Hassan Jaafar Hamdiyah: ORCID iD orcid.org/0000-0001-7305-4542
ORCID for Lingcong Meng: ORCID iD orcid.org/0000-0002-3995-3584
ORCID for Daniel Newbrook: ORCID iD orcid.org/0000-0002-5047-6168
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468
ORCID for Kees De Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Philip N. Bartlett: ORCID iD orcid.org/0000-0002-7300-6900
ORCID for Ruomeng Huang: ORCID iD orcid.org/0000-0003-1185-635X

Catalogue record

Date deposited: 05 Jan 2023 17:33
Last modified: 10 Apr 2024 02:07

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Contributors

Author: Ayoub Hassan Jaafar Hamdiyah ORCID iD
Author: Lingcong Meng ORCID iD
Author: Tongjun Zhang
Author: Dongkai Guo
Author: Daniel Newbrook ORCID iD
Author: Wenjian Zhang
Author: Gillian Reid ORCID iD
Author: Kees De Groot ORCID iD
Author: Ruomeng Huang ORCID iD

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