Practical approach to induce analog switching behavior in memristive devices: digital-to-analog transformation
Practical approach to induce analog switching behavior in memristive devices: digital-to-analog transformation
The capability of memristor devices to perform weight changes upon electrical pulses mimics the analogous firing mechanism in biological synapses. This capability delivers the potential for neuromorphic computing and pushes renewed interests in fabricating memristor with analog characteristics. Nevertheless, memristors could often exhibit digital switching, either during the set, reset, or both processes that degenerate their synaptic capability, and nanodevice engineers struggle to redesign the device to achieved analog switching. This chapter overviews some important techniques to transform the switching characteristics from digital to analog in valence change and electrochemical metallization types memristors. We cover physical dynamics involving interfacial diffusion, interfacial layer, barrier layer, deposition, and electrode engineering that can induce digital-to-analog switching transformation in memristor devices.
Simanjuntak, Firman
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Chandrasekaran, Sridhar
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Panda, Debashis
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Salem, Aftab
d5b20916-7288-4ead-b2b2-02a9514f13de
Prodromakis, Themis
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16 November 2021
Simanjuntak, Firman
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chandrasekaran, Sridhar
8aece1e1-b034-4f63-b0b1-f9b1e4490765
Panda, Debashis
e94eb431-589e-4a0a-82b8-0647442c0c5f
Salem, Aftab
d5b20916-7288-4ead-b2b2-02a9514f13de
Prodromakis, Themis
69199513-19d2-452c-9ed7-9e8e7dabeee0
Simanjuntak, Firman, Chandrasekaran, Sridhar, Panda, Debashis, Salem, Aftab and Prodromakis, Themis
(2021)
Practical approach to induce analog switching behavior in memristive devices: digital-to-analog transformation.
In,
Chang, Yao-Feng
(ed.)
Memristor: An Emerging Device for Post-Moore’s Computing and Applications.
IntechOpen.
(doi:10.5772/intechopen.98607).
Record type:
Book Section
Abstract
The capability of memristor devices to perform weight changes upon electrical pulses mimics the analogous firing mechanism in biological synapses. This capability delivers the potential for neuromorphic computing and pushes renewed interests in fabricating memristor with analog characteristics. Nevertheless, memristors could often exhibit digital switching, either during the set, reset, or both processes that degenerate their synaptic capability, and nanodevice engineers struggle to redesign the device to achieved analog switching. This chapter overviews some important techniques to transform the switching characteristics from digital to analog in valence change and electrochemical metallization types memristors. We cover physical dynamics involving interfacial diffusion, interfacial layer, barrier layer, deposition, and electrode engineering that can induce digital-to-analog switching transformation in memristor devices.
Text
Practical Approach to Induce Analog Switching Behavior in Memristive Devices: Digital-to-Analog Transformation
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Published date: 16 November 2021
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Local EPrints ID: 474207
URI: http://eprints.soton.ac.uk/id/eprint/474207
PURE UUID: b6d17409-f40d-46ac-9af1-0c36b782b0c8
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Date deposited: 15 Feb 2023 17:46
Last modified: 17 Mar 2024 03:59
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Contributors
Author:
Firman Simanjuntak
Author:
Sridhar Chandrasekaran
Author:
Debashis Panda
Author:
Aftab Salem
Author:
Themis Prodromakis
Editor:
Yao-Feng Chang
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