Improved switching performance of a Molybdenum Oxide-based bi-layer resistive memory

Zhang, Tongjun, Sun, Kai, Zeimpekis, Ioannis and Huang, Ruomeng (2022) Improved switching performance of a Molybdenum Oxide-based bi-layer resistive memory. 22nd IEEE International Conference on Nanotechnology : (IEEE-NANO 2022), Campus of Balearic Islands University (UIB), Palma, Spain. 04 - 08 Jul 2022. pp. 575-578 . (doi:10.1109/NANO54668.2022.9928600).

Record type: Conference or Workshop Item (Paper)

Abstract

In this paper, an atomic layer deposited memristor based on Al₂O₃/MoO₃ bi-layer structure is reported. Compared with the single layer MoO₃ based device, the bi-layer memristor demonstrates the improved bipolar switching behaviors including better endurance, higher ON/OFF ratio, and higher uniformity of the programming voltages. Space-charge-limited current (SCLC) model is used to explain the current conduction in our memristor. The formation and rupture of conductive oxygen vacancy-based filaments are illustrated as the proposed mechanism for the observed resistive switching behavior.

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Tongjun Zhang_Molybdenum oxide-based bi-layer resistive switching memory3.0 - Accepted Manuscript

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Published date: 8 November 2022

Venue - Dates: 22nd IEEE International Conference on Nanotechnology : (IEEE-NANO 2022), Campus of Balearic Islands University (UIB), Palma, Spain, 2022-07-04 - 2022-07-08

Keywords: MoO, Resistive memory, atomic layer deposition, bipolar switching

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